Zobrazeno 1 - 1
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pro vyhledávání: '"Shao Hai Zeng"'
Publikováno v:
Key Engineering Materials. :70-74
An embedded SiGe layer was applied in the source/drain areas (S/D) of a field-effect transistor to boost the performance in the p channels. Raised SiGe S/D plays a critical role in strain engineering. In this study, the relationship between the SiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7edc5f1564651cd21351155c219161ca
https://doi.org/10.4028/www.scientific.net/kem.645-646.70
https://doi.org/10.4028/www.scientific.net/kem.645-646.70
