Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shao Bo Dun"'
Publikováno v:
Advanced Materials Research. 662:284-287
Ka-band radio-frequency(RF) performance of a InAlN/GaN/AlGaN HFET on SiC was reported. Based on a detailed delay analysis,a maximum drain current density of 1.12 A/mm was obtained. Power measurements were performed, the maximum output power density i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604e51fc21c40e37af605b940e29d05b
https://doi.org/10.4028/www.scientific.net/amr.662.284
https://doi.org/10.4028/www.scientific.net/amr.662.284
Publikováno v:
Advanced Materials Research. 338:530-533
The nucleation mechanism during the epitaxial graphene films on Si-terminated SiC (0001) surfaces was investigated by atomic force microscopy (AFM) and Raman scattering spectrum. By imaging the change of Si-terminated SiC substrate surfaces, we obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce127d7d04d6f169139b970ef5db5b4b
https://doi.org/10.4028/www.scientific.net/amr.338.530
https://doi.org/10.4028/www.scientific.net/amr.338.530
Publikováno v:
Key Engineering Materials. :1229-1232
In this paper, transparent ceramics Mn:MgAl2O4, which are potentially applicable in visibleband laser field, were prepared and their light transmission and photoluminescence properties were investigated. In experiment, Mn:MgAl2O4 powders with two kin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b90c8a875a1454519862a27a937eaef
https://doi.org/10.4028/www.scientific.net/kem.336-338.1229
https://doi.org/10.4028/www.scientific.net/kem.336-338.1229
Autor:
Zhihong Feng, Yuanjie Lü, Shao-Bo Dun, Shujun Cai, Zhaojun Lin, Guodong Gu, Han Tingting, Jiayun Yin
Publikováno v:
Chinese Physics B. 23:027101
Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, tur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09cab4579b146d13756e9db0fa30d5a9
https://doi.org/10.1088/1674-1056/23/2/027101
https://doi.org/10.1088/1674-1056/23/2/027101
Publikováno v:
Chinese Physics B. 22:057105
The effect of an initially grown high-temperature AlN buffer (HT-AlN) layer’s thickness on the quality of an AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) in a two-step growth process is investigated. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45680f54e2d9b5f5d34cbe131dcb7286
https://doi.org/10.1088/1674-1056/22/5/057105
https://doi.org/10.1088/1674-1056/22/5/057105
Publikováno v:
Chinese Physics B. 21:097304
Graphene with different surface morphologies were fabricated on 8°-off-axis and on-axis 4H-SiC(0001) substrates by high-temperature thermal decompositions. Graphene grown on Si-terminated 8°-off-axis 4H-SiC(0001) shows lower Hall mobility than the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876d995fa6105c41ad293787b8b1d829
https://doi.org/10.1088/1674-1056/21/9/097304
https://doi.org/10.1088/1674-1056/21/9/097304
Autor:
Zhihong Feng, Jian-Nan Guo, Xinyu Liu, Tianchun Ye, Shao-Bo Dun, Hong-Liang Pan, Jia Li, Peng Ma, Zhi Jin
Publikováno v:
Chinese Physics Letters. 28:127202
Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2 O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30c9d2195934aad6b2b2d435465b05be
https://doi.org/10.1088/0256-307x/28/12/127202
https://doi.org/10.1088/0256-307x/28/12/127202
Autor:
Yuan-Jie, Lü, Zhi-Hong, Feng, Guo-Dong, Gu, Shao-Bo, Dun, Jia-Yun, Yin, Yuan-Gang, Wang, Peng, Xu, Ting-Ting, Han, Xu-Bo, Song, Shu-Jun, Cai, Chong-Biao, Luan, Zhao-Jun, Lin
Publikováno v:
Chinese Physics B; 2014, Vol. 23 Issue 2, p027102-027106, 5p
Autor:
Yuan-Jie, Lü, Zhi-Hong, Feng, Zhao-Jun, Lin, Guo-Dong, Gu, Shao-Bo, Dun, Jia-Yun, Yin, Ting-Ting, Han, Shu-Jun, Cai
Publikováno v:
Chinese Physics B; 2014, Vol. 23 Issue 2, p027101-027105, 5p