Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Shanthi Iyer"'
Autor:
Priyanka Ramaswamy, Shisir Devkota, Rabin Pokharel, Surya Nalamati, Fred Stevie, Keith Jones, Lew Reynolds, Shanthi Iyer
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
Abstract We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conduc
Externí odkaz:
https://doaj.org/article/588911d201ed4ed5bbdbf5b16547683e
Autor:
Sean Johnson, Rabin Pokharel, Michael Lowe, Hirandeep Kuchoor, Surya Nalamati, Klinton Davis, Hemali Rathnayake, Shanthi Iyer
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
Abstract This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem
Externí odkaz:
https://doaj.org/article/f560db38523747f589ea4326819b7479
Autor:
Ravi Shankara Birur Eshwarappa, Raman Shanthi Iyer, Sundara Rajan Subbaramaiah, S Austin Richard, Bhadrapura Lakkappa Dhananjaya
Publikováno v:
BioImpacts, Vol 4, Iss 2, Pp 101-107 (2014)
Introduction: Free radicals are implicated in several metabolic diseases and the medicinal properties of plants have been explored for their potent antioxidant activities to counteract metabolic disorders. This research highlights the chemical compos
Externí odkaz:
https://doaj.org/article/f0e076ec148f488cae593d13b53ce4cf
Autor:
Shisir Devkota, Hirandeep Kuchoor, Kendall Dawkins, Rabin Pokharel, Mehul Parakh, Jia Li, Shanthi Iyer
Publikováno v:
Nanotechnology. 34:265204
In this work, we present a systematic design of growth experiments and subsequent characterization of self-catalyzed molecular beam epitaxially grown GaAsSb heterostructure axial p–i–n nanowires (NWs) on p-Si for the ensemble photodetector (PD) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::189fdb654241d92fa79d2908b0438461
https://doi.org/10.1088/1361-6528/acc2c6
https://doi.org/10.1088/1361-6528/acc2c6
Autor:
Rabin Pokharel, Michael Lowe, Hemali Rathnayake, Sean Johnson, Surya Nalamati, Klinton Davis, Hirandeep Kuchoor, Shanthi Iyer
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
Scientific Reports
Scientific Reports
This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8cad1eb59d8ded78d69bd2301997fae
https://doaj.org/article/f560db38523747f589ea4326819b7479
https://doaj.org/article/f560db38523747f589ea4326819b7479
Autor:
Shisir Devkota, Mehul Parakh, Priyanka Ramaswamy, Hirandeep Kuchoor, Aubrey Penn, Lewis Reynolds, Shanthi Iyer
Publikováno v:
Catalysts; Volume 12; Issue 5; Pages: 451
In this work, the effects of arsenic (As) flux used during gallium (Ga) seed droplet consumption and the post-growth annealing on the optical, electrical, and microstructural properties of self-catalyzed molecular beam epitaxially grown tellurium (Te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19272e43515b4850000d7ac49f04b66a
Autor:
David W. Snyder, Roberto Garcia, Lewis Reynolds, Aubrey Penn, Shisir Devkota, Surya Nalamati, Robert M. Lavelle, Jia Li, Shanthi Iyer, Benjamin Huet
Publikováno v:
ACS Applied Electronic Materials. 2:3109-3120
We report the growth of vertical, high-quality GaAs0.9Sb0.1 nanowires (NWs) with improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si(111) by self-catalyzed molecular beam ep...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecf9b755d8c37c4c3df46a31f5f3fa8e
https://doi.org/10.1021/acsaelm.0c00433
https://doi.org/10.1021/acsaelm.0c00433
Autor:
Rabin Pokharel, Kendall Dawkins, Shisir Devkota, Mehul Parakh, Lewis Reynolds, Priyanka Ramaswamy, Matthew J. Cabral, Shanthi Iyer, Aubrey Penn
Publikováno v:
ACS Applied Electronic Materials. 2:2730-2738
Band gap engineering of GaAsSbN nanowires (NWs) grown by Ga-assisted molecular beam epitaxy and demonstration of a Te-doped axial GaAsSbN NW-based Schottky barrier photodetector on p-Si (111) in th...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb7f57cfbffbd3d970daa490bccf03d5
https://doi.org/10.1021/acsaelm.0c00450
https://doi.org/10.1021/acsaelm.0c00450
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
Intrinsic and Te-doped GaAsSb nanowires with diameters ~100–120 nm were grown on a p-type Si(111) substrate by molecular beam epitaxy (MBE). Detailed magnetic, current/voltage and low-energy electron energy loss spectroscopy measurements were perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70aee1a6fc173fe778747d63e138a190
http://link.springer.com/article/10.1038/s41598-020-65805-4
http://link.springer.com/article/10.1038/s41598-020-65805-4
Autor:
Mehul, Parakh, Priyanka, Ramaswamy, Shisir, Devkota, Hirandeep, Kuchoor, Kendall, Dawkins, Shanthi, Iyer
Publikováno v:
Nanotechnology. 33(31)
This work evaluates the passivation efficacy of thermal atomic layer deposited (ALD) Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c57b26471603f36f6792281786c2f4f3
https://pubmed.ncbi.nlm.nih.gov/35468592
https://pubmed.ncbi.nlm.nih.gov/35468592