Zobrazeno 1 - 10
of 207
pro vyhledávání: '"Shankar Narayanan A"'
Publikováno v:
Journal of Coloproctology, Vol 40, Iss 1, Pp 89-93 (2020)
Here we describe an infrequent case of gastrointestinal stromal tumor of the rectum in a 57 year-old man with spindle cell neoplasm probably gastrointestinal stromal tumor and CT scan showed tumor from the anterior rectal wall and offered abdominoper
Externí odkaz:
https://doaj.org/article/ba2b873ce9dc4f9f8a10bef33b9af74e
Autor:
Shaji Thomas John, Kizhanipurath Gayathri, Shabina Ahmed, Kawaljit Singh Multtani, Puthezhath Shankar Narayanan Menon, Raman Krishna Kumar, Vaikom Hariharan Sankar, Prajnya Ranganath, Neerja Gupta, Mohandas Nair, Madhava Vijayakumar, Jeeson C. Unni
Publikováno v:
Indian Pediatrics. 60:298-307
Autor:
Mei-Li Hsieh, A. Kaiser, T. Romero, James A. Bur, Shankar Narayanan, A. Levitan, Shawn-Yu Lin
Publikováno v:
IEEE Photonics Journal. 14:1-5
Publikováno v:
International journal of health sciences. :5070-5079
The research analysis is aimed to enhance the specific domain knowledge for Ludo which can be used for performance improvement in Dijkstra Algorithm networks or in evolutionary game analysis for ludo games. The Ludo game involves decision-making unde
Publikováno v:
CSI Transactions on ICT. 10:201-207
Akademický článek
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Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:1655-1667
This study quantitatively compares the finite element (FE) and lumped modeling techniques to analyze phase-change and multiphase flow in a microchannel evaporator. We compare the one- and two-zone models in the lumped modeling approach by considering
Autor:
S Arull Murugan, S Dharsini, S Ganapathi Subramaniyan, Mitesh Kumar, Omkar Ashok Lokhande, Yatin Shankar Narayanan
Publikováno v:
2022 10th RSI International Conference on Robotics and Mechatronics (ICRoM).
Publikováno v:
2022 10th RSI International Conference on Robotics and Mechatronics (ICRoM).
Publikováno v:
IEEE Transactions on Electron Devices. 67:5613-5620
In this article, an approach for design optimization of high-voltage (≥3300 V) planar clustered insulated gate bipolar transistor (CIGBT) is proposed and investigated through TCAD simulations. New 3-D scaling rules are employed in this approach to