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pro vyhledávání: '"Shangmin Ru"'
Publikováno v:
Crystals, Vol 12, Iss 5, p 687 (2022)
A good understanding of the chemical disorder in silicon carbide (SiC) after ion irradiation is crucial for evaluating structural stability in both semiconductor and nuclear power systems. In this study, 6H-SiC single-crystal was irradiated with 500
Externí odkaz:
https://doaj.org/article/9e23f18d8b5f4665b2a1fbf6af1dc764
