Zobrazeno 1 - 10
of 78
pro vyhledávání: '"ShangSheng Li"'
Publikováno v:
Sensors, Vol 20, Iss 3, p 586 (2020)
In the conventional neural network, deep depth is required to achieve high accuracy of recognition. Additionally, the problem of saturation may be caused, wherein the recognition accuracy is down-regulated with the increase in the number of network l
Externí odkaz:
https://doaj.org/article/79bb88700293438f949769d2e852dbe8
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:23673-23681
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27491d9364a26983a5f2b80b0f941688
https://doi.org/10.1007/s10854-022-09126-4
https://doi.org/10.1007/s10854-022-09126-4
Publikováno v:
In International Journal of Refractory Metals and Hard Materials January 2015 48:61-64
Autor:
Yuan Nie, ShangSheng Li, Qiang Hu, JunZhuo Wang, MeiHua Hu, TaiChao Su, GuoFeng Huang, ZhanChang Li, Yong Li, HongYu Xiao
Publikováno v:
Optical Materials. 137:113538
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f506efc0bea12dd2da60dfe136bc85d
https://doi.org/10.1016/j.optmat.2023.113538
https://doi.org/10.1016/j.optmat.2023.113538
Publikováno v:
International Journal of Applied Ceramic Technology. 17:1629-1635
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c254677f671ae298d2a054ce4b9b44
https://doi.org/10.1111/ijac.13526
https://doi.org/10.1111/ijac.13526
Autor:
Du Jingyang, Zhu Hongyu, Meihua Hu, Hu Qiang, Fan Haotian, Shangsheng Li, Taichao Su, Hongtao Li
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:6855-6860
Recently, PbSe has attracted extensive attention as an excellent thermoelectric material, which is considered as an alternative for PbTe. In this paper, single-phase PbSe was rapidly synthesized by mechanical alloying followed by high-pressure sinter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed0f8b2a9fae80c05c654ece5cc2af59
https://doi.org/10.1007/s10854-020-03245-6
https://doi.org/10.1007/s10854-020-03245-6
Publikováno v:
Solid State Sciences. 135:107078
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67ef105b0b369143685393f57a85de6
https://doi.org/10.1016/j.solidstatesciences.2022.107078
https://doi.org/10.1016/j.solidstatesciences.2022.107078
Autor:
Chunchen, Zhang, Ruize, Gao, Shigang, Guo, Chunmin, Ning, Aolei, Li, Xiangtao, Wang, Shangsheng, Li, Jianhua, Ding, Xinliang, Kong, Qiang, Wang, Yanjie, Xu, Jiaqi, Li, Jun, Gao, Shaohong, Wang, Jian, Kong, Shan, Ke, Wenbing, Sun
Publikováno v:
European Journal of Radiology. 155:110498
To compare the long-term outcomes of anatomic resection (AR) and radiofrequency ablation (RFA) with an ablative margin (AM) of ≥ 1.0 cm as first-line treatment for solitary hepatocellular carcinoma measuring ≤ 3 cm.Two hundred and fifty-one patie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::815a79a77d41bfdce5f925820d8f7911
https://doi.org/10.1016/j.ejrad.2022.110498
https://doi.org/10.1016/j.ejrad.2022.110498
Autor:
Taichao Su, Hu Qiang, Xiaobing Liu, Zhu Hongyu, Hu Meihua, Wencai Yi, Shangsheng Li, Manman Yang, Du Baoli
Publikováno v:
Physics Letters A. 383:2615-2620
In this paper, p-type thermoelectric material Te–Se solid solutions have been successfully prepared by the high-pressure technique. The thermal conductivity of Te was depressed sharply by Se alloying. An extremely low thermal conductivity ∼0.27 W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d0e10ff7602e4b0bec4c170874968a
https://doi.org/10.1016/j.physleta.2019.05.019
https://doi.org/10.1016/j.physleta.2019.05.019
Autor:
Hongan Ma, Lu Feng, Xiaopeng Jia, Fei Han, Jian-Kang Wang, Shangsheng Li, Meihua Hu, Taichao Su, He Yu, Jinlei Cui, Kun-Peng Yu
Publikováno v:
International Journal of Refractory Metals and Hard Materials. 81:100-110
The n-type semiconductor large single diamonds with S doping and B-S co-doping were successfully synthesized in FeNi-C system at the constant conditions about temperature 1250 °C and pressure 5.6 GPa. In this study, the effects of different additive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7914472d452c29723d923d27d2f2cdf
https://doi.org/10.1016/j.ijrmhm.2019.02.011
https://doi.org/10.1016/j.ijrmhm.2019.02.011