Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shang-Shian Yang"'
Autor:
Shang-Shian Yang, Hong-Lin Lai, Chih-Chia Chen, Shao-Tse Lu, Yu-Min Dai, Wen-Cheng Cheng, Yiin-Kuen Fuh, Tomi T. Li
Publikováno v:
Journal of Materials Research and Technology, Vol 30, Iss , Pp 2754-2767 (2024)
Physical Vapor Deposition (PVD) of Tantalum/Tantalum Nitride (Ta/TaN) liner and barrier plays a crucial role in the copper-interconnecting part of semiconductor manufacturing, and this is used for the 130 nm–5nm technology node and beyond. This stu
Externí odkaz:
https://doaj.org/article/8d5f527841494f8eadd011ef8296c296
Autor:
Wei-Lun Chen, Shang Shian Yang, Ning Hsiu Yuan, Wei Yu Zhou, Yu-Pu Yang, Hsiao-Han Lo, Peter J. Wang, Walter Lai, Yiin-kuen Fuh, Tomi T. Li
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cddd7e4d1d43201ef88ab89b39a3b0bd
https://doi.org/10.1109/cstic55103.2022.9856787
https://doi.org/10.1109/cstic55103.2022.9856787
Publikováno v:
Surface and Coatings Technology. 201:4850-4853
Epitaxial growth of a titanium nitride (TiN) on (6H)-SiC (0001) is achieved at room temperature by means of direct current magnetron sputtering. The epitaxial relationship is established by X-ray pole figure and Φ-scan. Cross-sectional transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fedf61a313ea8e21393fb2e0874e1b0
https://doi.org/10.1016/j.surfcoat.2006.07.120
https://doi.org/10.1016/j.surfcoat.2006.07.120
Autor:
Song-Yeu Tsai, I-Cherng Chen, Yan-Ru Lin, ‡ and Shinn-Tyan Wu, Shang-Shian Yang,†,‡, ‡ Hao-Cheng Hsu
Publikováno v:
Crystal Growth & Design. 6:1951-1955
Zinc oxide (ZnO) nanowire (NW) was grown on a ZnO-buffered silicon substrate by a hydrothermal method in an aqueous solution that contained methenamine (C6H12N4) and zinc nitrate hexahydrate (Zn(NO3)2·6H2O). The concentration of the zinc nitrate is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a661313a4dff520e6c3485a49fb0cb91
https://doi.org/10.1021/cg050416u
https://doi.org/10.1021/cg050416u
Autor:
Shinn-Tyan Wu, Yung-Kuan Tseng, Shang-Shian Yang,†,‡, I-Cherng Chen, Shoou-Jinn Chang, Yan-Ru Lin, Cheng-Liang Hsu
Publikováno v:
The Journal of Physical Chemistry B. 108:18799-18803
One-dimensional semiconductor nanomaterials are expected to be important components in future nano-devices. The well-controlled growth of the nanomaterials is the most important aspect of nano-devices production. A new and simple means of growing ZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f39f294192e8e5508386500187910c50
https://doi.org/10.1021/jp0456382
https://doi.org/10.1021/jp0456382
Autor:
Shinn Tyan Wu, Shoou-Jinn Chang, Yan-Ru Lin, Yung Kuan Tseng, Shang Shian Yang, Cheng-Liang Hsu
Publikováno v:
Crystal Growth & Design. 5:579-583
This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1bbf95f6cfb571ff3f3d15c8e72204d
https://doi.org/10.1021/cg049747h
https://doi.org/10.1021/cg049747h
Autor:
Shang-Shian, Yang
Thesis (Ph.D.)--National Tsing Hua University Materials Science and Engineering
Non-Latin script record. Includes bibliographical references
Non-Latin script record. Includes bibliographical references
Publikováno v:
Crystal Growth & Design; Aug2006, Vol. 6 Issue 8, p1951-1955, 5p
Autor:
Chen, Wei-Lun1 (AUTHOR), Zhou, Wei-Yu1 (AUTHOR), Yuan, Ning-Hsiu1 (AUTHOR), Yang, Shang-Shian1 (AUTHOR), Wang, Peter J.2 (AUTHOR), Lo, Hsiao-Han2 (AUTHOR), Li, Tomi T.1 (AUTHOR), Fuh, Yiin-kuen1 (AUTHOR) mikefuh@ncu.edu.tw
Publikováno v:
International Journal of Advanced Manufacturing Technology. Jul2023, Vol. 127 Issue 5/6, p2955-2967. 13p.