Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Shang-Jr Chen"'
Autor:
Shang-Jr Chen, 陳尚志
90
The charge pumping (CP) technique has been widely used for the characterization of hot carrier (HC) reliability and the evaluation of semiconductor interface. The objective of this dissertation is to employ this CP technique for investigating
The charge pumping (CP) technique has been widely used for the characterization of hot carrier (HC) reliability and the evaluation of semiconductor interface. The objective of this dissertation is to employ this CP technique for investigating
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/14725014500598252592
Publikováno v:
Japanese Journal of Applied Physics. 42:1928-1932
With an increase of power dissipation and integrated-circuit (IC) density in system-on-a-Chip (SoC), it is not sufficient to determine complementary metal-oxide-semiconductor (CMOS) device lifetime by merely monitoring stress-bias conditions, such as
Publikováno v:
Japanese Journal of Applied Physics. 41:4493-4499
Plasma etching of poly-silicon in a metal-oxide-semiconductor field-effect transistor (MOSFET) during the gate definition process induces edge damage at the gate-drain overlap edge. This edge damage will be further enhanced by the antenna effect and
Autor:
Hun-Jan Tao, Howard Wang, Mong-Song Liang, Carlos H. Diaz, Huan-Just Lin, Ying Keung Leung, Ching-Wei Tsai, Ying Jin, Yuh-Jier Mii, Shang-Jr Chen, Peng-Soon Lim, Shih-Chang Chen, Tian-Choy Gan
Publikováno v:
2006 International Symposium on VLSI Technology, Systems, and Applications.
A 1.4 nm EOT stack film of HfSiON with interfacial oxide layer (IL) is demonstrated with excellent electrical characteristics and reliability for 45 nm node low-power technology. Mobility comparable to SiON is achieved along with adequate nMOS PBTI l
Autor:
Carlos H. Diaz, Howard Wang, Min-Hwa Chi, Chien-Tai Chan, A.S. Oates, Huan-Just Lin, Shih-Chang Chen, Ching-Wei Tsai, Ying Jin, Hun-Jan Tao, Mong-Song Liang, Shang-Jr Chen, Tongchern Ong
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
Optimizing nitrogen incorporation in HfSiON gate dielectric can improve overall reliability, e.g. nMOS PBTI lifetime, hot carrier (HC) lifetime, time-to-breakdown (tBD), without adverse effects on pMOS NBT1 lifetime and electron/hole mobility. The im
Autor:
Liang Min-Chang, H.T. Lin, S.S. Lin, W.M. Chen, Ming-Huan Tsai, Y.C. See, C.H. Wang, Chih-Sheng Chang, H. T. Huang, S.Y. Wu, H.C. Lin, S.M. Jang, W.J. Liang, Tze-Liang Lee, P.W. Wang, Carlos H. Diaz, Y.K. Leung, Yi-Ming Sheu, Y.C. Sun, Chang-Yun Chang, C.H. Hsieh, Burn-Jeng Lin, S.Z. Chang, C.Y. Fu, S.L. Shue, Shang-Jr Chen, D.W. Lin, Yuh-Jier Mii, C.C. Wu, L.K. Han
Publikováno v:
Digest. International Electron Devices Meeting.
A leading edge 90nm bulk CMOS device technology is described in this paper. In this technology, multi Vt and multi gate oxide devices are offered to support low standby power (LP), general-purpose (G or ASIC), and high-speed (HS) system on chip (SoC)
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials.
Autor:
Wang, H.C.-H., Shang-Jr Chen, Ming-Fang Wang, Pang-Yen Tsai, Ching-Wei Tsai, Ta-Wei Wang, Ting, S.M., Tuo-Hung Hou, Peng-Soon Lim, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Diaz, C.H., Mong-Song Liang, Chenming Hu
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p161-164, 4p
Autor:
Tian-Choy Gan, Wang, H.C.-H., Shang-Jr Chen, Ching-Wei Tsai, Peng-Soon Lim, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Ying Keung Leung, Diaz, C.H., Mong-Song Liang, Yuh-Jier Mii
Publikováno v:
2006 International Symposium on VLSI Technology, Systems & Applications; 2006, p1-2, 2p