Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shang-Ho Lin"'
Autor:
Che-Chi Shih, Chia-Chun Wei, Ming-Huei Huang, Pang-Chia Chang, Po-Wei Yu, Shang-Ho Lin, Ben-Li Young, Wen-Bin Jian, Kimitoshi Kono
Publikováno v:
Proceedings of the 29th International Conference on Low Temperature Physics (LT29).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13ec2e94deb5327973b8f101caffebfb
https://doi.org/10.7566/jpscp.38.011007
https://doi.org/10.7566/jpscp.38.011007
Autor:
Dah-Chung Owe-Yang, Jen-Chieh Shih, Shang-Ho Lin, Harrison Chen, J. H. Chen, Chia-Sui Hsu, Rang-Ching Ho
Publikováno v:
Journal of Photopolymer Science and Technology. 17:497-500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c268a5483e87f54afe9ebea38474045
https://doi.org/10.2494/photopolymer.17.497
https://doi.org/10.2494/photopolymer.17.497
Autor:
Jeffrey D. Byers, Andrew Jamison, C. Grant Willson, Anthony Vander Heyden, Miko Yamachika, Raymond J. Hung, Brian C. Trinque, Kyle Patterson, Shang Ho Lin, Colin J. Brodsky, Takashi Chiba, Will Conley, Shintaro Yamada, Mark Somervell
Publikováno v:
Journal of Photopolymer Science and Technology. 13:657-664
The goal or this work has been to study candidate fluorocarbon materials that might serve as platforms from which to design 157nm resists. A specific goal of the work has been to identify transparent candidate materials that might provide a polymer b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef84eae0a2bba54832075fda2f2c449c
https://doi.org/10.2494/photopolymer.13.657
https://doi.org/10.2494/photopolymer.13.657
Publikováno v:
Organometallics. 16:2121-2126
The carbonyl complex of (meso-tetraphenyltetrabenzoporphyrinato)ruthenium(II), Ru(TPTBP)(CO), has been synthesized and characterized by FABMS, UV/vis, 1H NMR, and IR spectroscopy. Six-coordinate complexes Ru(TPTBP)(CO)(L) with different π-bonding-ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f67f2f3ff1637ca066026522b52fd2
https://doi.org/10.1021/om960653h
https://doi.org/10.1021/om960653h
Autor:
Kevin Lee, Joseph Kennedy, Mark Slezak, Songyuan Xie, Ze-Yu Wu, Kyle Flanigan, Shang-Ho Lin, Ron Katsanes, Zhi Liu
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
This work discusses the requirements and performance of Honeywell's middle layer material, UVAS, for tri-layer patterning. UVAS is a high Si content polymer synthesized directly from Si containing starting monomer components. The monomers are selecte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc04f3563b71b40e3d2e4c06066bb1d
https://doi.org/10.1117/12.814440
https://doi.org/10.1117/12.814440
Publikováno v:
Scopus-Elsevier
Fungal corneal ulcers related to agriculture has been reported throughout the world, especially in tropical areas. Most of them were sporadic and had histories of ocular trauma or use of topical corticosteroids and topical antibiotics. Five onion har
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6b10976a8fe369ddc225f634c7da90d
https://doi.org/10.1136/oem.56.6.423
https://doi.org/10.1136/oem.56.6.423
Autor:
Charles R. Chambers, Shang-Ho Lin, C. Grant Willson, J. Christopher Taylor, Will Conley, Ramzy M. Shayib, Sumarlin Goh
Publikováno v:
SPIE Proceedings.
Immersion lithography at 193 nm has rapidly changed status from a novel technology to the top contender for the 45 nm device node. The likelihood of implementation has raised interest in extending its capabilities. One way to extend immersion lithogr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6938cb36a52ec256af4e4d92c75dcac
https://doi.org/10.1117/12.600771
https://doi.org/10.1117/12.600771
Publikováno v:
SPIE Proceedings.
The continuous shrinkage of critical dimensions on 300 mm wafers has driven ArF lithography to resolve very small features for the next generation node. But the depth of focus (DOF) for 100 nm contact holes with a low NA of 0.75 is not adequate. Some
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c383502f43fb0e62b9cdbe3b5e65c1f1
https://doi.org/10.1117/12.535141
https://doi.org/10.1117/12.535141
Autor:
Andrew Grenville, Timothy A. Shedd, Dah-Chung Owe-Yang, Keith Doxtator, Gregory F. Nellis, Scott D. Schuetter, Chris K. Van Peski, Shang-Ho Lin
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 5:023002
The semiconductor industry has used optical lithography to create impressively small features. However, the resolution of optical lithography is approaching limits based on light wavelength and numerical aperture. Immersion lithography is a means to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f523481b7aee95beb98262298e8451a6
https://doi.org/10.1117/1.2198540
https://doi.org/10.1117/1.2198540
Autor:
C. Grant Willson, Shang Ho Lin, Colin J. Brodsky, Kyle Patterson, Raymond J. Hung, Brian C. Trinque, Takashi Chiba, Tony Vander Heyden, Jeff D. Byers, Hoang Vi Tran, Heather F. Johnson, Andrew Thomas Jamieson, Shintaro Yamada, Mark Somervell, Will Conley, Sungseo Cho
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3396
Many semiconductor device manufacturers plan to make products with 157 nm lithography beginning in 2004. There is, at this time, no functional photoresist suitable for 157 nm exposure. Developing resist materials for 157 nm lithography is particularl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ec449f507d887e43795a1c0e7132c4
https://doi.org/10.1116/1.1321762
https://doi.org/10.1116/1.1321762