Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Shang-Cyun Chen"'
Autor:
Bo-Hong Li, Hou-Yu Wang, Kuang-Po Hsueh, Li-Yi Peng, Hsiang-Chun Wang, Jiun-Wei Chiu, Hsien-Chin Chiu, Shang-Cyun Chen
Publikováno v:
Microelectronics Reliability. 83:238-241
This study demonstrated AlGaN/GaN Schottky barrier diodes (SBDs) for use in high-frequency, high-power, and high-temperature electronics applications. Four structures with various Fe doping concentrations in the buffer layers were investigated to sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2347a9846bc5e8c74389314745e2bca1
https://doi.org/10.1016/j.microrel.2017.05.034
https://doi.org/10.1016/j.microrel.2017.05.034
Autor:
Kuang-Po Hsueh, Feng-Tso Chien, Hsien-Chin Chiu, Bo-Hong Li, Hsiang-Chun Wang, Shang-Cyun Chen, Jiun-Wei Chiu
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N177-N181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7215c3c4689e5af1236b66e429a5c5e9
https://doi.org/10.1149/2.0081710jss
https://doi.org/10.1149/2.0081710jss
Autor:
Bo-Hong Li, Kuang-Po Hsueh, Hsien-Chin Chiu, Rong Xuan, Shang-Cyun Chen, Jiun-Wei Chiu, Chih-Wei Hu
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:041205
AlGaN/GaN high-electron mobility transistors (HEMTs) with different Fe-doped Al0.25Ga0.75N buffer layers were fabricated on silicon (Si) substrate to improve breakdown voltage and reduce leakage current. Fe doping concentrations for the AlGaN buffer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f9b13cdbb68304a9dd004bffb84a80c
https://doi.org/10.1116/1.4991535
https://doi.org/10.1116/1.4991535
Autor:
Hsien-Chin Chiu, Shang-Cyun Chen, Jiun-Wei Chiu, Bo-Hong Li, Rong Xuan, Chih-Wei Hu, Kuang-Po Hsueh
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jul/Aug2017, Vol. 35 Issue 4, p1-6, 6p