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pro vyhledávání: '"Shang Yao Tsai"'
Publikováno v:
ECS Transactions. 16:339-343
We investigated the stability of a-Si:H TFTs under mechanical strain with and without silicon nitride (SiNx:H) passivation. The process temperature of these flexibledevice, including the passivation layer, was well-controlled below 200°, and the sub
Autor:
Shang-Yao Tsai, 蔡尚祐
96
The application of flexible active-matrix display has become most promising technology in the whole wide world display industry recent years. Due to the properties such as light-weighted, flexible, and durable, there are some remarkable advan
The application of flexible active-matrix display has become most promising technology in the whole wide world display industry recent years. Due to the properties such as light-weighted, flexible, and durable, there are some remarkable advan
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/69425969418420627360
Publikováno v:
ECS Meeting Abstracts. :2323-2323
The effects of the uniaxial mechanical strain stress on hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) were studied in this work. The proposed a-Si TFTs were fabricated on thin steel foil, and all process temperature was well-co