Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Shang Ju Tu"'
Improved Output Power of GaN-based Blue LEDs by Forming Air Voids on Ar-Implanted Sapphire Substrate
Publikováno v:
Journal of Lightwave Technology. 31:1318-1322
This paper investigates GaN-based blue light-emitting diodes (LEDs) grown on sapphire substrates with selective-area Ar-ion implantation. The GaN-based epitaxial layers grown on the Ar-implanted sapphire substrates (Ar-ISS) exhibited selective growth
Publikováno v:
IEEE Journal of Quantum Electronics. 48:1305-1309
Al0.45Ga0.55N/GaN solar-blind p-i-n photodiodes (PDs), fabricated by selective growth on SiO2 patterned n-GaN templates, are demonstrated in this paper. This selective-area-regrowth technique could lead to a reduction of tensile strain in the Al0.45G
Autor:
Yu Hsiang Yeh, Jinn-Kong Sheu, Wei-Chih Lai, Gou-Chung Chi, Shang-Ju Tu, F. W. Huang, Po Cheng Chen, Ming-Lun Lee, Chung-Wei Chen
Publikováno v:
IEEE Journal of Quantum Electronics. 48:1004-1009
In this paper, air gaps were embedded in the n-GaN layer to improve light output power of InGaN-based light-emitting diodes (LEDs). Si ions (Si±28) were implanted on the n-GaN surface, causing a lattice constant disorder. Therefore, the GaN grown on
Autor:
Jinn-Kong Sheu, Shang Ju Tu, Feng Wen Huang, Y. C. Yang, Chih-Chiang Yang, Shu Yen Liu, Ming-Lun Lee, Che Kang Hsu
Publikováno v:
Microelectronics Reliability. 52:949-951
Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140 °C. In addition to the low-tem
Autor:
Chia-Ling Chen, Wei-Chih Lai, F. W. Huang, Chih-Chiang Yang, Ming-Lun Lee, Yung-Hui Yeh, Jinn-Kong Sheu, Shang-Ju Tu, Gou-Chung Chi
Publikováno v:
IEEE Electron Device Letters. 32:1400-1402
GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on i
Autor:
Chi-Shiang Hsu, Chih-Chiang Yang, Shoou-Jinn Chang, Jinn-Kong Sheu, M. L. Lee, Chung-Hsun Jang, Shang-Ju Tu, F. W. Huang
Publikováno v:
IEEE Photonics Technology Letters. 23:968-970
The effect of growth pressure of underlying undoped GaN(u-GaN) layer on the electrical properties of GaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSS) is evaluated. The electrostatic discharge (ESD) endurance voltage
Autor:
Jinn-Kong Sheu, X. W. Liang, M. S. Huang, Yu Hsiang Yeh, Ming-Lun Lee, F. W. Huang, Wei-Chih Lai, Cheng-Huang Kuo, Chih-Chiang Yang, Shang-Ju Tu
Publikováno v:
IEEE Electron Device Letters. 32:536-538
The InGaN/sapphire-based photovoltaic (PV) cells with Al0.14Ga0.86N/In0.21Ga0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the short-circuit curr
Autor:
Shang-Ju Tu, Li-Chi Peng, Wei-Chih Lai, Ming-Lun Lee, Jinn-Kong Sheu, Kuo-Hua Chang, Chih-Ciao Yang
Publikováno v:
IEEE Electron Device Letters. 30:225-227
In this letter, we display InGaN/GaN-based photovoltaic (PV) devices with active layers in absorbing the solar spectrum around blue regions. The GaN/In0.25Ga0.75 N superlattice layers grown by metalorganic vapor-phase epitaxy are designed as the abso
Autor:
Y. C. Yang, Wei-Chih Lai, Tsun Kai Ko, Shang Ju Tu, Ming-Lun Lee, Feng Wen Huang, Schang Jing Hon, Jinn-Kong Sheu
Publikováno v:
Optics express. 20(1)
Vertical GaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using the wafer-bonding technique. Lapping and dry-etching processes were performed for thinning the sapphire substrate instead of removing this substrate using the l
Autor:
F. W. Huang, Jinn-Kong Sheu, M. L. Lee, Yu Chuan Lin, Jhao Cheng Ye, Wei-Chih Lai, Shu Yen Liu, Shang-Ju Tu
Publikováno v:
Optics express. 19
An n-GaN photoelectrochemical (PEC) cell with immersed finger-type indium tin oxide (ITO) ohmic contacts was demonstrated in the present study to enhance the hydrogen generation rate. The finger-type ITO ohmic contacts were covered with SiO2 layers t