Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Shang, ShunLi"'
Autor:
Debnath, Arindam, Raman, Lavanya, Li, Wenjie, Krajewski, Adam M., Ahn, Marcia, Lin, Shuang, Shang, Shunli, Beese, Allison M., Liu, Zi-Kui, Reinhart, Wesley F.
The rapid design of advanced materials is a topic of great scientific interest. The conventional, ``forward'' paradigm of materials design involves evaluating multiple candidates to determine the best candidate that matches the target properties. How
Externí odkaz:
http://arxiv.org/abs/2307.13581
Autor:
Wang, Yi, Xiong, Yihuang, Yang, Tiannan, Yuan, Yakun, Shang, Shunli, Liu, Zi-Kui, Gopalan, Venkatraman, Dabo, Ismaila, Chen, Long-Qing
This work demonstrates a first-principles-based approach to obtaining finite temperature thermal and electronic transport properties which can be employed to model and understand mesoscale structural evolution during electronic, magnetic, and structu
Externí odkaz:
http://arxiv.org/abs/2210.08631
Autor:
Debnath, Arindam, Krajewski, Adam M., Sun, Hui, Lin, Shuang, Ahn, Marcia, Li, Wenjie, Priya, Shanshank, Singh, Jogender, Shang, Shunli, Beese, Allison M., Liu, Zi-Kui, Reinhart, Wesley F.
Generative deep learning is powering a wave of new innovations in materials design. In this article, we discuss the basic operating principles of these methods and their advantages over rational design through the lens of a case study on refractory h
Externí odkaz:
http://arxiv.org/abs/2108.12019
Autor:
Li, Wenjie, Raman, Lavanya, Debnath, Arindam, Ahn, Marcia, Lin, Shuang, Krajewski, Adam M., Shang, Shunli, Priya, Shashank, Reinhart, Wesley F., Liu, Zi-Kui, Beese, Allison M.
Publikováno v:
In International Journal of Refractory Metals and Hard Materials June 2024 121
Autor:
Yan, Han, Feng, Zexin, Shang, Shunli, Wang, Xiaoning, Hu, Zexiang, Wang, Jinhua, Zhu, Zengwei, Wang, Hui, Chen, Zuhuang, Hua, Hui, Lu, Wenkuo, Wang, Jingmin, Qin, Peixin, Guo, Huixin, Zhou, Xiaorong, Leng, Zhaoguogang, Liu, Zikui, Jiang, Chengbao, Coey, Michael, Liu, Zhiqi
Publikováno v:
Nature Nanotechnology 14, 131-136 (2019)
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM
Externí odkaz:
http://arxiv.org/abs/1901.03551
Publikováno v:
In Progress in Natural Science: Materials International February 2023 33(1):83-91
Autor:
Paik, Hanjong, Chen, Zhen, Lochocki, Edward, Seidner, Ariel H., Verma, Amit, Tanen, Nicholas, Park, Jisung, Uchida, Masaki, Shang, ShunLi, Zhou, Bi-Cheng, Brützam, Mario, Uecker, Reinhard, Liu, Zi-Kui, Jena, Debdeep, Shen, Kyle M., Muller, David A., Schlom, Darrell G.
Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1
Externí odkaz:
http://arxiv.org/abs/1711.00496
Autor:
Li, Bing, Shang, Shunli, Zhao, Jiawei, Itkis, Daniil M., Jiao, Xingxing, Zhang, Chaofan, Liu, Zi-Kui, Song, Jiangxuan
Publikováno v:
In Carbon 30 October 2020 168:468-474
Autor:
Tang, Jian, Xue, Xiangyi, Yi Wang, William, Lin, Deye, Ahmed, Tanvir, Wang, Jun, Tang, Bin, Shang, Shunli, Belova, Irina V., Song, Haifeng, Murch, Graeme E., Li, Jinshan, Liu, Zi-Kui
Publikováno v:
In Computational Materials Science January 2020 171
Publikováno v:
In Solar Energy February 2016 125:314-323