Zobrazeno 1 - 10
of 318
pro vyhledávání: '"Shang, Fen"'
Autor:
Lee, Cheng‐Te1 (AUTHOR) lzd4@faculty.pccu.edu.tw, Wu, Shang‐Fen1 (AUTHOR)
Publikováno v:
International Journal of Economic Theory. Mar2023, Vol. 19 Issue 1, p166-174. 9p.
Autor:
Kuo, Kuo‐Hsing1 (AUTHOR), Wu, Shang‐Fen1 (AUTHOR), Lee, Cheng‐Te1 (AUTHOR) lzd4@faculty.pccu.edu.tw
Publikováno v:
International Journal of Economic Theory. Dec2022, Vol. 18 Issue 4, p472-485. 14p.
Publikováno v:
Communications in Theoretical Physics; July 2002, Vol. 38 Issue: 1 p91-98, 8p
First-principles total-energy calculations of the H/Si(001)-2x1 surfaces reveals a dual diffusion process for the Si adatoms: single along the dimer row while pairing up across the row. The calculated diffusion barrier along the dimer row is 1.1 eV,
Externí odkaz:
http://arxiv.org/abs/physics/0612047
Autor:
Cheng, Wei, Ren, Shang-Fen
Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight binding model combined with the irreducible representations of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0208395
Autor:
Cheng, Wei, Ren, Shang-Fen
Raman intensities of Si quantum dots (QDs) with up to 11,489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these QDs, including all vibration frequencies and vibration amplitudes, are
Externí odkaz:
http://arxiv.org/abs/cond-mat/0112174
Autor:
Ren, Shang-Fen, Qin, G.
By means of a microscopic valence force field model, a series of novel microscopic interface phonon modes are identified in shell quantum dots(SQDs) composed of a GaAs quantum dot of nanoscale embedded in an AlAs shell of a few atomic layers in thick
Externí odkaz:
http://arxiv.org/abs/cond-mat/0106436
Autor:
WU, SHANG-FEN1 (AUTHOR), LEE, CHENG-TE1 (AUTHOR) lzd4@faculty.pccu.edu.tw
Publikováno v:
Singapore Economic Review. Apr2021, p1-13. 13p.
Akademický článek
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Publikováno v:
Biomedical Microdevices; Dec2023, Vol. 25 Issue 4, p1-9, 9p