Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shane Todd"'
Autor:
Donghwa Lee, Sukant K. Tripathy, Subramaniam Arulkumaran, Weizhu Wang, Guo-Qiang Lo, Siew Lang Teo, Shane Todd, M. Krishna Kumar, Hao Li, Joyce Pei Ying Tan, Vivian Kaixin Lin, S. B. Dolmanan, S. Vicknesh, R. S. Kajen, Geok Ing Ng, Sang A Han, Lakshmi Kanta Bera
This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e9fa0f48ad07583e388de82a1c1134c
https://hdl.handle.net/10356/95566
https://hdl.handle.net/10356/95566
Autor:
Yong-Zhong Xiong, Lei Wang, Subramaniam Arulkumaran, Shane Todd, Patrick Guo-Qiang Lo, Geok Ing Ng, Yihu Li, Wang Ling Goh
Publikováno v:
2011 International Symposium on Integrated Circuits.
This paper presents the low frequency noise investigation of the AlGaN/GaN on silicon Schottky diode. The noise power spectral density of various sizes of the AlGaN/GaN Schottky diodes under different biasing voltages has been measured. The 1/f behav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::150f6ecc85526c1ccc4d1c7649ac9933
https://doi.org/10.1109/isicir.2011.6132012
https://doi.org/10.1109/isicir.2011.6132012
Autor:
Geok Ing Ng, Yihu Li, Patrick Guo-Qiang Lo, Shane Todd, Wang Ling Goh, Yong-Zhong Xiong, Lei Wang, Subramaniam Arulkumaran
Publikováno v:
2011 International Symposium on Integrated Circuits.
The I-V characteristics and S-parameters of AlGaN/GaN on silicon Schottky diodes are investigated. A compact circuit model is constructed for RF application. Simulated results are compared with measured results using AlGaN/GaN on Silicon diodes as RF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97091dedd890b0f9803c20b4723a506
https://doi.org/10.1109/isicir.2011.6131961
https://doi.org/10.1109/isicir.2011.6131961