Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Shane R. Palmer"'
Autor:
Shane R. Palmer, Stephen P. Renwick, Jacek K. Tyminski, Julia A. Sakamoto, Steven Douglas Slonaker
Publikováno v:
SPIE Proceedings.
Demand for ever increasing level of microelectronics integration continues unabated, driving the reduction of the integrated circuit critical dimensions, and escalating requirements for image overlay and pattern dimension control. The challenges to m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::704ed70406cf61c5d594b79f79071a47
https://doi.org/10.1117/12.2218146
https://doi.org/10.1117/12.2218146
Autor:
Tomoyuki Matsuyama, Ryota Matsui, Nobumichi Kanayamaya, Naonori Kita, Shane R. Palmer, Donis G. Flagello, Daniel Smith
Publikováno v:
SPIE Proceedings.
Source Mask Optimization (SMO) is one of the most important techniques available for extending ArF immersion lithography1. However, imaging with a small k12 factor (~0.3 or smaller) is very sensitive to errors in the illumination pupil2. As a result,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b06a070bd5866952f8a0cd8448fc6b
https://doi.org/10.1117/12.879116
https://doi.org/10.1117/12.879116
Publikováno v:
SPIE Proceedings.
The practical extendibility of immersion lithography to the 45nm half-pitch is being investigated on a 1.30NA immersion projection microstepper installed at SEMATECH North in Albany, New York. Preliminary implementation of various aperture designs an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f581228bd3623e1a78d7cdf586381cd4
https://doi.org/10.1117/12.720863
https://doi.org/10.1117/12.720863
Publikováno v:
SPIE Proceedings.
Over the years process development engineers found creative ways to extent the capabilities of existing imaging techniques to enable production of the next technology node. For the 45nm node the immersion technology is being prepared for production,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ddbbd43631fa62a73dcc559c2398405
https://doi.org/10.1117/12.656059
https://doi.org/10.1117/12.656059
Autor:
Leonardus H. A. Leunissen, D. E. Hardy, Marylyn Hoy Bennett, Andrew Grenville, Theodore M. Bloomstein, Scott D. Hector, Mordechai Rothschild, James N. Hilfiker, Shane R. Palmer, Vicky Philipsen
Publikováno v:
Optical Microlithography XVIII.
Polarization dependent diffraction efficiencies in transmission through gratings on specially designed masks with pitch comparable to the wavelength were measured using an angle-resolved scatterometry apparatus with a 193 nm excimer source. Four mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e77b9cafa281606deca6cf82007246f
https://doi.org/10.1117/12.600098
https://doi.org/10.1117/12.600098
Autor:
Michael L. Rieger, John P. Stirniman, John N. Randall, James Burdorf, Mark E. Mason, T.J. Aton, Keeho Kim, Alexander Tritchkov, Shane R. Palmer
Publikováno v:
SPIE Proceedings.
Selective strong phase shift mask techniques, whereby a phase-shift mask exposure is followed by a binary mask exposure to define a single pattern, present unique capabilities and problems. First, there is the proper exposure balance and alignment of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fefa27126a2d54a51064ae7a3705d8d
https://doi.org/10.1117/12.410679
https://doi.org/10.1117/12.410679
Publikováno v:
SPIE Proceedings.
The evaluation of 'future' SRAM designs often involves aggressive patterning techniques. This is especially true for the prototyping stage of a product because the target 'production' tools are either unavailable or suffer from immature processes. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee2af96bf219dee48f1e3242dc4bb7c
https://doi.org/10.1117/12.389083
https://doi.org/10.1117/12.389083
Publikováno v:
SPIE Proceedings.
The recent development of lithographic resolution enhancement techniques of optical proximity correction (OPC) and phase shift masks (PSM) enable sprinting critical dimension (CD) features that are significantly smaller than the exposure wavelength.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bb6abde20dd014816208811458435fc
https://doi.org/10.1117/12.388938
https://doi.org/10.1117/12.388938
Publikováno v:
SPIE Proceedings.
Defect printability was investigated to assess the reticle defect size tolerance for 0.50 micrometers wafer lithography through the study of programmed reticle defect within line/space pairs. Improvement in the recent generation of steppers with high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a63af3bb006b2a370581bb8fe0732647
https://doi.org/10.1117/12.209313
https://doi.org/10.1117/12.209313
Autor:
Rainer Pforr, Anthony Yen, Kurt G. Ronse, Gene E. Fuller, Shane R. Palmer, Oberdan W. Otto, Luc Van den Hove
Publikováno v:
SPIE Proceedings.
The effectiveness of two methods of optical proximity correction based on feature biasing and subresolution assisting features is compared by simulation and experiments. Parameters examined are overlapping focus- exposure windows for dense lines, sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354f34f86308950cad7ed0f09d8c33d2
https://doi.org/10.1117/12.209249
https://doi.org/10.1117/12.209249