Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Shan-Yi Yang"'
Autor:
Sk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu, Duan-Lee Deng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 163-169 (2020)
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high res
Externí odkaz:
https://doaj.org/article/f0f3a62054ee4f20ac4fdbc9293e0221
Autor:
Sk Ziaur Rahaman, Yu-Chen Hsin, Shan-Yi Yang, Yao-Jen Chang, Hsin-Han Lee, Kuan-Ming Chen, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Cheng-Yi Shih, Shih-Ching Chiu, Chih-Yao Wang, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Duan-Li Deng, Shih-Chieh Chang
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cec1d757d0b2200f68227d8efc41127
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134109
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134109
Autor:
Ming-Chun Hong, Yi-Hui Su, Guan-Long Chen, Yu-Chen Hsin, Yao-Jen Chang, Kuan-Ming Chen, Shan-Yi Yang, I-Jung Wang, SK Ziaur Rahaman, Hsin-Han Lee, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Tuo-Hung Hou
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc5c199d184691a425b06756dd54d5c
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134453
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134453
Autor:
Ming-Chun Hong, Yao-Jen Chang, Yu-Chen Hsin, Liang-Ming Liu, Kuan-Ming Chen, Yi-Hui Su, Guan-Long Chen, Shan-Yi Yang, I-Jung Wang, SK Ziaur Rahaman, Hsin-Han Lee, Shih-Ching Chiu, Chen-Yi Shih, Chih-Yao Wang, Fang-Ming Chen, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Minn-Tsong Lin, Chih-I Wu, Tuo-Hung Hou
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba79907fc808b081010f73908175e50
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830503
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830503
Autor:
Yao-Jen Chang, Fang-Ming Chen, Kuan-Ming Chen, Shan-Yi Yang, Yu-Chen Hsin, Sk Ziaur Rahaman, I-Jung Wang, Hsin-Han Lee, Yi-Hui Su, Guan-Long Chen, Cheng-Yi Shih, Shih-Ching Chiu, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Yuan-Chieh Tseng, Chih-Huang Lai, Denny Tang, Chih-I Wu
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23aa9b48146bbbe6d72a68b523e2f844
https://doi.org/10.1109/vlsi-tsa54299.2022.9771020
https://doi.org/10.1109/vlsi-tsa54299.2022.9771020
Autor:
Ziaur Rahaman Sk, Yao-Jen Chang, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Duan-Li Deng, Shih-Chieh Chang
Publikováno v:
Journal of Magnetism and Magnetic Materials. 565:170296
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::786059307ba075436dfdbc76793250f6
https://doi.org/10.1016/j.jmmm.2022.170296
https://doi.org/10.1016/j.jmmm.2022.170296
Autor:
Fang-Ming Chen, Yao-Jen Chang, Shan-Yi Yang, Shyh-Shyuan Sheu, Yi-Hui Su, Hsin-Tsun Wu, Yu-Chen Hsin, Guan-Long Chen, SK Ziaur Rahaman, I-Jung Wang, Kuan-Ming Chen, Denny Duan-Lee Tang, Hsu-Ming Hsiao, Sih-Han Li, Jeng-Hua Wei, Po-Shao Yeh, Chih-I Wu, H. Y. Lee
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We’d built 8kb spin-orbit-torque (SOT) MRAM chips to evaluate our cell design and the process recipes to integrate them on CMOS wafer. For the SOT cell, the switching threshold is well correlated to the tungsten channel resistivity. We will show th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449d57f227b2ef9bdcc9633b39daf668
https://doi.org/10.1109/vlsi-tsa51926.2021.9440096
https://doi.org/10.1109/vlsi-tsa51926.2021.9440096
Autor:
Fen Xue, Shan-Yi Yang, Yi-Hui Su, Yu-Chen Hsin, I-Jung Wang, Shy-Jay Lin, Chi-Feng Pai, Jeng-Hua Wei, Yao-Jen Chang, MingYaun Song, Guan-Long Chen, Carlos H. Diaz, Yen Lin Huang, Chien-Ming Lee, Shan X. Wang
Publikováno v:
IRPS
Spin-orbit-torque magnetic random-access memory (SOT-MRAM) equipped with sub-I-V switching voltage [1, 2] is considered to be one of the promising candidates for next-generation low-power, high speed and non-volatile embedded cache memory application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e537a83651102d833d9941a36b8764e
https://doi.org/10.1109/irps46558.2021.9405127
https://doi.org/10.1109/irps46558.2021.9405127
Autor:
S. Z. Rahaman, Wei-Chung Lo, Yi-Hui Su, Shyh-Shyuan Sheu, Shih-Chieh Chang, Ding-Yeong Wang, Fang-Ming Chen, Jeng-Hua Wei, Chih-I Wu, Guan-Long Chen, Yu-Chen Hsin, Shan-Yi Yang, H. Y. Lee, Yi-Ching Kuo, Yao-Jen Chang, I-Jung Wang, Sih-Han Li
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
The large linear dynamic range tunnel magnetoresistance (TMR) sensors were designed and successfully fabricated in 8 inch Silicon process line for current / magnetic sensing applications. In this paper, the TMR sensors show their performances strongl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e8e9513886ed14dfac74fb7c5c5ebfa
https://doi.org/10.1109/vlsi-tsa48913.2020.9203712
https://doi.org/10.1109/vlsi-tsa48913.2020.9203712
Autor:
Shyh-Shyuan Sheu, Ding-Yeong Wang, Jeng-Hua Wei, Shih-Chieh Chang, Pei-Jer Tzeng, Chih-I Wu, H. Y. Lee, Guan-Long Chen, I-Jung Wang, Wei-Chung Lo, Yu-Chen Hsin, SK Ziaur Rahaman, Yi-Ching Kuo, Yao-Jen Chang, Shan-Yi Yang, Fang-Ming Chen, Yi-Hui Su
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
The Tunnel Magnetoresistance (TMR) biosensor with different magnetic tunnel junction (MTJ) aspect ratios was developed. With the specific designs and the process development, the sensing distance of the active sensor could be shortened to 74.2 nm to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6252d99439928e8f313bbe569eafd011
https://doi.org/10.1109/vlsi-tsa48913.2020.9203603
https://doi.org/10.1109/vlsi-tsa48913.2020.9203603