Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Shan-Ming Lan"'
Autor:
Chin Chang Shen, Ji Wei Ci, Yu Ting Lin, Wei Chen Tu, Tsun Neng Yang, Wu Yih Uen, Shan Ming Lan, Chih-Hung Wu
Publikováno v:
Thin Solid Films. 591:43-48
Polycrystalline CuCl films were fabricated by chemical bath deposition (CBD) on a Cu substrate at a low solution temperature of 90 °C. Continuous CuCl films were prepared using the copper (II) chloride (CuCl2) compound as the precursor for both the
Publikováno v:
Journal of Crystal Growth. 388:87-91
The structure and chemical composition of Cu 1− x Zn 1− y Se 2− δ (Cu–Zn–Se) ternary alloy semiconductors were examined by transmission electron microscopy (TEM) coupled with energy dispersive X-ray spectroscopy (EDS), a TEM/EDS analytical
Autor:
Tsun Neng Yang, Wu Yih Uen, Wei Chen Tu, Shan Ming Lan, Jian Chang Jhao, Jia Xian Zeng, Chin Chang Shen, Ji Wei Ci
Publikováno v:
Journal of The Electrochemical Society. 161:D321-D326
Autor:
Tsung-Ming Chen, Chin-Chang Shen, Shan-Ming Lan, Tsun-Neng Yang, Kuo-Jen Chang, Jian-Chang Jhao, Wu-Yih Uen, Cheng-Fang Hsu
Publikováno v:
Journal of Crystal Growth. 381:144-147
I–II–VI Ternary chalcopyrite semiconductors of Cu 1− x Zn 1− y Se 2− δ (Cu3Zn3Se) were successfully fabricated by the atmospheric pressure metal-organic chemical vapor deposition method for the first time. Four major peaks of (112), (220)/
Autor:
Shan-Ming Lan, Wu-Yih Uen, Chih-Hung Wu, Sen-Mao Liao, Li-Wei Weng, Tsun-Neng Yang, Chin-Chang Shen, Hwe-Fen Hong, Wei-Yang Ma
Publikováno v:
Applied Surface Science. 277:1-6
p-type ZnO films were prepared by atmospheric metal-organic chemical vapor deposition technique using arsine (AsH 3 ) as the doping source. The electrical and optical properties of arsenic-doped ZnO (ZnO:As) films fabricated at 450–600 °C with var
Publikováno v:
physica status solidi (a). 209:1053-1058
Zinc oxide (ZnO) thin film was grown on semi-insulating Si substrate using arsine (AsH3) as precursor by atmospheric-pressure metal-organic chemical vapor deposition (AP-MOCVD). In recently reported results, the physical mechanisms for As-doped ZnO t
Autor:
Yu-Hsiang Huang, J. L. Shen, G. W. Shu, Y.W. Liu, Shan Ming Lan, C.H. Wu, Min-De Yang, Shih-Chang Tong, Tsun-Neng Yang, S.W. Wu
Publikováno v:
Thin Solid Films. 519:3421-3424
The energy relaxation of hot electrons in ZnO films was investigated by the electric-field-dependent photoluminescence. From the high-energy tail of photoluminescence, the electron temperature of the hot electrons in ZnO was determined. Longitudinal
Autor:
Tai-Yuan Lin, Wu-Yih Uen, Yen-Chin Huang, Tsun-Neng Yang, Shan-Ming Lan, Zhen-Yu Li, Li-Wei Weng, Sen-Mao Liao
Publikováno v:
Journal of Alloys and Compounds. 509:1980-1983
The effects of post-annealing conducted at 500–650 °C on structural, electrical and optical properties of ZnO film fabricated on GaAs (1 0 0) substrate by atmospheric pressure metal-organic chemical vapor deposition are investigated. X-ray diffrac
Publikováno v:
Journal of The Electrochemical Society. 159:H112-H116
Solar cells based on arrays of vertical Si submicron or nano-sized wires are promising candidates for lowering production-related material costs while still obtaining efficiencies competitive with those of planar multicrystalline Si cells. To the bes
Autor:
Shan-Ming Lan, Sen-Mao Liao, Jian-Wen Chen, Tsun-Neng Yang, Wu-Yih Uen, Li-Wei Weng, Yen-Chin Huang, Zhen-Yu Li, Tai-Yuan Lin, Yu-Hsiang Huang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 28:1307-1311
The structural, electrical, and optical properties of ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) under various gas flow ratios of [H2O]/[DEZn] (VI/II ratio) ranging from 0.55 to 2.74 were systemati