Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Shambhu Bhandari Sharma"'
Publikováno v:
Carbon Trends, Vol 7, Iss , Pp 100162- (2022)
We report here, structural, dynamic, and mechanical stability in pentagonal boron carbon nitride (p-BCN) monolayer, a new member of direct bandgap two-dimensional (2D) semiconductor. The identified visible range bandgap with excellent mechanical stre
Externí odkaz:
https://doaj.org/article/0f1533c4f82746fc97cfb06eac03d12f
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 4068 (2022)
Pentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pe
Externí odkaz:
https://doaj.org/article/1c2a580d2d9a49da9e37c794295c1209
Publikováno v:
ACS Omega. 7:36235-36243
The scarce negative Poisson's ratio (NPR) in a two-dimensional (2D) material is an exceptional auxetic property that offers an opportunity to develop nanoscale futuristic multi-functional devices and has been drawing extensive research interest. Insp
Publikováno v:
ACS Applied Electronic Materials. 4:2561-2569
Publikováno v:
Journal of Nepal Physical Society. 7:60-65
Using the first principle calculation, we investigated the structural, electronic, and strain-dependent optical properties of the two-dimensional hexagonal Silicon Carbide (SiC) Monolayer. We found that the biaxial compressive strain loading graduall
Publikováno v:
Computational Materials Science. 218:111952
Autor:
Shambhu Bhandari Sharma, Ramesh Paudel, Rajendra Adhikari, Gopi Chandra Kaphle, Durga Paudyal
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 146:115517
Autor:
Shambhu Bhandari Sharma, I.A. Qattan
Publikováno v:
Applied Surface Science. 599:153997
Autor:
Gopi Chandra Kaphle, Ramesh Paudel, Durga Paudyal, Rajendra Adhikari, Shambhu Bhandari Sharma
In the framework of density functional theory (DFT), we investigate the structural deformation, and mechanical behavior of the Janus CrSSe, which has out-of-plane structural asymmetry, with conventional transition metal dichalcogenides (TMDs) CrS2 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c042d6e46813de3dc1d0fd3de644784
https://doi.org/10.33774/chemrxiv-2021-86v0v
https://doi.org/10.33774/chemrxiv-2021-86v0v
Autor:
Shambhu Bhandari Sharma
The inherited insulating behavior of hexagonal boron nitride (h-BN) monolayer restricts its application in several optoelectronic devices, so finding a technique to reduce the bandgap allows it to possess the semiconducting functionality. Here, an ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19fd3d73af6e7c6ced72760dbfe27fa5
https://doi.org/10.26434/chemrxiv-2021-pzp5m
https://doi.org/10.26434/chemrxiv-2021-pzp5m