Zobrazeno 1 - 10
of 116
pro vyhledávání: '"Shaloo Rakheja"'
Publikováno v:
APL Materials, Vol 11, Iss 9, Pp 091110-091110-13 (2023)
We numerically investigate and develop analytic models for both the DC and pulsed spin–orbit-torque (SOT)-driven response of order parameter in single-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral 120° spin structure. We sh
Externí odkaz:
https://doaj.org/article/29aaaccec4bc4f61b600eac055a996d2
Autor:
Siyuan Qian, Shaloo Rakheja
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 134-142 (2023)
An echo state network (ESN), capable of processing time-series data with high accuracy, is designed and benchmarked using spin torque nano-oscillators (STNOs) with easy-plane anisotropy. An ESN belongs to the category of reservoir computers, where th
Externí odkaz:
https://doaj.org/article/6b027d9b654b4fa6bc67ac76d0242337
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 385-398 (2023)
In this work, we demonstrate and model the deep-level defect physics of semi-insulating gallium arsenide bulk photoconductive semiconductor switches (PCSS) with gap size of $10 ~\mu \text{m}$ and $25 ~\mu \text{m}$ in dark-mode operation. Experimenta
Externí odkaz:
https://doaj.org/article/f40f53b06d3f420dbf36699980fb9bca
Autor:
Ather Mahmood, Will Echtenkamp, Mike Street, Jun-Lei Wang, Shi Cao, Takashi Komesu, Peter A. Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Voltage control of magnetization is critical for the development of antiferromagnetic spintronics. Here, using magnetic force microscopy and Hall measurements, Mahmood et al. demonstrate controlled rotation of the Néel vector in a heterostructure co
Externí odkaz:
https://doaj.org/article/480e7655ec4e4da791319a4d92ef4d89
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 521-532 (2021)
The wide bandgap material, Gallium Nitride (GaN), has emerged as the dominant semiconductor material to implement high-electron mobility transistors (HEMTs) that form the basis of RF electronics. GaN is also an excellent material to realize photocond
Externí odkaz:
https://doaj.org/article/d1cd314d68914fa5b17b9de391cd64d6
Publikováno v:
IEEE Access, Vol 8, Pp 76130-76142 (2020)
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation. I
Externí odkaz:
https://doaj.org/article/a0238f7219634f0cbda21a662b4d8655
Publikováno v:
IEEE Access, Vol 8, Pp 129562-129575 (2020)
Nanonntennas are critical elements of nanoscale wireless communication technologies with potential to overcome some of the limitations of on-chip interconnects. In this paper, we model the optical response of graphene-based nanoantennas (GNAs) using
Externí odkaz:
https://doaj.org/article/d95b8a5cf8e84f3cbdfbe86bcf4ce24d
Autor:
Vitaly Petrov, Dmitri Moltchanov, Maria Komar, Alexander Antonov, Pavel Kustarev, Shaloo Rakheja, Yevgeni Koucheryavy
Publikováno v:
IEEE Access, Vol 5, Pp 6095-6109 (2017)
Massive multi-core processing has recently attracted significant attention from the research community as one of the feasible solutions to satisfy constantly growing performance demands. However, this evolution path is nowadays hampered by the comple
Externí odkaz:
https://doaj.org/article/d1fcdab25fc243828670c45a596b212d
Autor:
Shaloo Rakheja
Publikováno v:
IET Cyber-Physical Systems (2018)
Graphene-based heterostructures provide a viable platform to implement optoelectronic devices that can operate in the terahertz (THz) band. In this study, the authors focus on multilayer (ML) graphene as the building block to implement high-frequency
Externí odkaz:
https://doaj.org/article/463eb30fbc7143cf9dbe99310b4ca646
Publikováno v:
IEEE Transactions on Electron Devices. 70:2034-2041
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and field-emission p