Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Shajan Mathew"'
Autor:
Renay Weiner, Micah Fineberg, Bridget Dube, Prabuddhagopal Goswami, Shajan Mathew, Gina Dallabetta, Saul Johnson
Publikováno v:
BMC Public Health, Vol 18, Iss 1, Pp 1-10 (2018)
Abstract Background The Avahan India AIDS Initiative was implemented to provide HIV prevention services to key populations including female sex workers (FSWs) who carry the burden of India’s concentrated HIV epidemic. Established in 2003 and handed
Externí odkaz:
https://doaj.org/article/7698c81def2f47fdaccb35520c544a96
Akademický článek
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Autor:
Ranganathan Nagarajan, Feng Han Hua, Shajan Mathew, L. K. Bera, N. Balasubramanian, Du An Yan
Publikováno v:
Thin Solid Films. :63-66
A low temperature resist trimming process with low trimming rate and good uniformity was developed. Wafer chuck temperature in the ashing chamber was adjusted to be 6 °C to achieve low trimming rate and improve process uniformity. Low power oxygen a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ffee54292f8df2744666ce26b72269
https://doi.org/10.1016/j.tsf.2004.05.021
https://doi.org/10.1016/j.tsf.2004.05.021
Publikováno v:
Thin Solid Films. :11-14
NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a8f8418834d01baa7c48a8676cf60a
https://doi.org/10.1016/j.tsf.2004.05.017
https://doi.org/10.1016/j.tsf.2004.05.017
Autor:
J.G. Fiorenza, C. Leitz, Mayank T. Bulsara, H. Badawi, J. Carlin, Matthew T. Currie, N. Balasubramanian, T. Lochtefeld, G. Braithwaite, Shajan Mathew, L. K. Bera, Richard Hammond, T. A. Langdo, J. Yap, F. Singaporewala
Publikováno v:
Thin Solid Films. :85-89
Effect of strained-Si thickness on electrical properties of furnace grown gate oxide has been investigated. Interface state density ( D it ) versus energy characteristics shows that D it increases with decreasing strained-Si thickness, probably due t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a114750a98e6abd7618f6d2522c4fc1b
https://doi.org/10.1016/j.tsf.2004.05.028
https://doi.org/10.1016/j.tsf.2004.05.028
Autor:
Moon Sig Joo, Vanissa Sei Wei Lim, Byung Jin Cho, M. Balasubramanian, N. Balasubramanian, Shajan Mathew, L. K. Bera
Publikováno v:
Thin Solid Films. :101-105
In this work, we have investigated the wet etching of MOCVD grown HfO2 film using diluted HF. The effect of various implant species on the etch rate was also extensively studied. Etch depth profile for as-deposited film shows that etch rate is higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::093007db7df0ef33003e8e343cd277f3
https://doi.org/10.1016/j.tsf.2004.05.121
https://doi.org/10.1016/j.tsf.2004.05.121
Autor:
Shajan Mathew, F. Singaporewala, G. Braithwaite, N. Balasubramanian, Mayank T. Bulsara, Richard Hammond, J. Yap, Eugene A. Fitzgerald, L.K. Bera, Matthew T. Currie, Anthony Lochtefeld
Publikováno v:
Applied Surface Science. 224:278-282
Carrier generation lifetime ( τ g ) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of thermally grown gate oxide on strained-Si/SiGe has been studied prior to transient capacitance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::133859ddbca80e2d9562d0214ff4b4de
https://doi.org/10.1016/j.apsusc.2003.08.054
https://doi.org/10.1016/j.apsusc.2003.08.054
Autor:
Prabuddhagopal Goswami, Gajendra Kumar Medhi, Gregory Armstrong, Maninder Singh Setia, Shajan Mathew, Gay Thongamba, Lakshmi Ramakrishnan, Bitra George, Rakesh Kumar Singh, Ramesh S. Paranjape, Jagadish Mahanta
Publikováno v:
The International journal on drug policy. 25(5)
BackgroundThe present study describes an assessment of a large-scale intervention, “Avahan”, using an evaluation framework that assesses the program coverage, changes in injection patterns, condom use, and STI and HIV prevalence among People Who
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ace6db5a8c2583ec856e6e2dc3e53d87
https://pubmed.ncbi.nlm.nih.gov/24925819
https://pubmed.ncbi.nlm.nih.gov/24925819
Publikováno v:
Indian Journal of Transplantation. 9:55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98be494937c0359065e9f2815211fcfa
https://doi.org/10.1016/j.ijt.2015.09.022
https://doi.org/10.1016/j.ijt.2015.09.022
Autor:
Moon Sig Joo, Shajan Mathew, D.S.H. Chan, Wei Yip Loh, Byung Jin Cho, Dim-Lee Kwong, Ming-Fu Li
Publikováno v:
IEEE International Electron Devices Meeting 2003.
Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-k bulk initiated, and an interfacial layer initiated. The results correlate with the statistical Weibull distribution showing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1a4d5a2f8c4c6c7da0dbc6019793e42
https://doi.org/10.1109/iedm.2003.1269430
https://doi.org/10.1109/iedm.2003.1269430