Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Shailesh K. Khamari"'
Publikováno v:
Physical Review B. 104
The GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin relaxation in the satellite X valley of indirect band gap ${\mathrm{Al}}_{0.63}{\mathrm{Ga}}_{0.37}\mathrm{As}$ epitaxial layers through polarization-resolved photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc9ff7502d070eef9344bc68c58c2a24
https://doi.org/10.1103/physrevb.104.115202
https://doi.org/10.1103/physrevb.104.115202
Autor:
Abhishek Chatterjee, Shailesh K. Khamari, Ravi Kumar, Sanjay Porwal, Aniruddha Bose, S. Raghavendra, Vijay Kumar Dixit, Tarun Kumar Sharma
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2200322
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38b1928626cbbfe71388bbafe3f1fdb1
https://doi.org/10.1002/pssr.202200322
https://doi.org/10.1002/pssr.202200322
Publikováno v:
Journal of Luminescence. 213:204-209
GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection of spin polarized electrons in Al0.22Ga0.78As material over the excitation energy range of 1.85–3.4 eV. By analyzing the degree of circular polarization (DC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8565dccd66f534ef6d91cddda1620874
https://doi.org/10.1016/j.jlumin.2019.05.036
https://doi.org/10.1016/j.jlumin.2019.05.036
Publikováno v:
Journal of Physics D: Applied Physics. 54:495107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0166d0512653d4308bae4e75c7683be6
https://doi.org/10.1088/1361-6463/ac252d
https://doi.org/10.1088/1361-6463/ac252d
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2018.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4ce228ab0c664508389da318519181
https://doi.org/10.1063/1.5113299
https://doi.org/10.1063/1.5113299
Autor:
Shailesh K. Khamari, S. Haldar, V. K. Dixit, T. K. Sharma, R. Roychowdhury, Geetanjali Vashisht, Heena Darji
Publikováno v:
AIP Conference Proceedings.
The effect of surface and interface states of various GaAs based structures such as n+GaAs, n-n+GaAs and p-i-n GaAs are investigated for understanding the detector performance. These structures are grown by metal organic vapor phase epitaxy (MOVPE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2713d260e1d1f32f74d80140153f1bd
https://doi.org/10.1063/1.5098613
https://doi.org/10.1063/1.5098613
Publikováno v:
2018 4th IEEE International Conference on Emerging Electronics (ICEE).
GaN metal-semiconductor-metal (MSM)ultraviolet photodetectors without and with annealed ZrO 2 insulating layers are successfully fabricated. It is found that the dark current is reduced by 3 times post annealing of the oxide layer. GaN MSM photo dete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c571883a2fdb9aae030b8be992c3adc
https://doi.org/10.1109/icee44586.2018.8938018
https://doi.org/10.1109/icee44586.2018.8938018
Publikováno v:
Journal of Physics D: Applied Physics. 54:205101
Numerical simulations are carried out to estimate the inverse spin Hall voltage (V ISHE) as a function of applied electric field, dopant density and excitation energy for n-GaAs based opto-spintronic devices. Adopting a three valley rate equation mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2485b2934ff2e228e3a3061e64ccb6a
https://doi.org/10.1088/1361-6463/abe570
https://doi.org/10.1088/1361-6463/abe570
Publikováno v:
Superlattices and Microstructures. 148:106733
The role of threading dislocations and point defects is investigated by comparing the performance of metal-semiconductor-metal ultraviolet photodetectors (PDs) fabricated on GaN epilayers grown by hydride vapour phase epitaxy (HVPE) and metal organic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d93dded70600f4efd70473c05d15409f
https://doi.org/10.1016/j.spmi.2020.106733
https://doi.org/10.1016/j.spmi.2020.106733