Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Shahab N. Alam"'
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga, Al)N-based photonic and electronic devices. The bandgaps and bandgap bowing parameters of III-nitrides across the full composition range are reviewed wit
The room temperature effect of a low dose rate (10-4 rad (Si)/s) 60 Co γ-irradiation on the structural propertiesand dark current of the GaN-based metal-semiconductor-metal (MSM) structure has been studied. In contrast to previous studies, a non-mon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad2d5dae48c9433c3aca37583def0802
https://doi.org/10.21203/rs.3.rs-748205/v1
https://doi.org/10.21203/rs.3.rs-748205/v1
Publikováno v:
Scientific reportsReferences. 10(1)
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga, Al)N-based photonic and electronic devices. The bandgaps and bandgap bowing parameters of III-nitrides across the full composition range are reviewed wit
Autor:
Zahra Payandehdarinejad, Bijan Ghafary, Ali Ghaffarinejad, Shahab N. Alam, Hamid Reza Mazandarani
Publikováno v:
Optical Materials. 122:111634
The current study reports the fabrication of an ultraviolet photodetector composed of zinc oxide nanorods (ZnO NRs) and polypyrrole nanoparticles (PPy NPs) on a carbon clothes substrate. The use of high temperature tolerant and suitable conductive fl
Publikováno v:
Journal of Crystal Growth. 435:12-18
The effect of V/III ratio on the growth and properties of AlGaN layers grown on (112¯2) AlN templates grown on (101¯0) sapphire by metalorganic vapour phase epitaxy was studied. The surface morphology of the (112¯2) AlGaN layers and the (112¯2) A
Publikováno v:
Bulletin of Materials Science. 37:1583-1588
In this study, aluminium oxide films were deposited on BK7 glass substrates using radio frequency mag- netron sputtering. The purposes of this study are to clarify the influence of O2 flow as reactive partial gas, which is necessary to form Al2O3 fil
Autor:
Thomas C. Sadler, Peter J. Parbrook, Shahab N. Alam, Pietro Pampili, Duc V. Dinh, Vitaly Z. Zubialevich, Haoning Li
Publikováno v:
Journal of Luminescence. 155:108-111
InAlN/AlGaN multiple quantum wells (MQWs) emitting between 300 and 350 nm have been prepared by metalorganic chemical vapor deposition on planar AlN templates. To obtain strong room temperature luminescence from InAlN QWs a two temperature approach w
Autor:
Shahab N. Alam, Peter J. Parbrook, Evgenii V. Lutsenko, M. V. Rzheutski, Vipul Bhardwaj, Thomas C. Sadler, G. P. Yablonskii, Vitaly Z. Zubialevich, Haoning Li
The structural and luminescent properties of InxAl1-xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1358f4023375d4009099e06954a5330
https://hdl.handle.net/10468/5975
https://hdl.handle.net/10468/5975
Autor:
Menno J. Kappers, Frederik G. Scholtz, Colin J. Humphreys, Fabrice Oehler, Peter J. Parbrook, Marian Caliebe, Vitaly Z. Zubialevich, Duc V. Dinh, Shahab N. Alam
InGaN layers were grown simultaneously on (11 (2) over bar2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (>= 750 degrees C), the indium content (2) and (0001) InGaN layers was similar. However, for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83d250b4c5ee9843ff73672a5bef83b9
https://hdl.handle.net/10468/4715
https://hdl.handle.net/10468/4715
Autor:
Peter J. Parbrook, Shahab N. Alam, Eoin P. O'Reilly, Duc V. Dinh, Stefan Schulz, Vitaly Z. Zubialevich
Publikováno v:
Semiconductor Science and Technology. 31:025006
80–120 nm thick In x Al1−x N epitaxial layers with 0 < x < 0.224 were grown by metalorganic vapour phase epitaxy on AlN/Al2O3-templates. The composition was varied through control of the growth temperature. The composition dependence of the band