Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Shafat Jahangir"'
Publikováno v:
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular beam epitaxial growth and the properties of InGaN/GaN self‐assembled quantum dots have been investigated in detail. The quantum dots, emitting in the visible range, have been studied optically through temperature‐dependent, excitation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e9e92402755ee0f4ec016de85b10ea9
https://doi.org/10.1002/9781119354987.ch13
https://doi.org/10.1002/9781119354987.ch13
Publikováno v:
Novel In-Plane Semiconductor Lasers XVII.
GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be201a89ea60a080f39d32ecbfcd869
https://doi.org/10.1117/12.2302548
https://doi.org/10.1117/12.2302548
Autor:
Arnab Hazari, Xianhe Liu, Lifan Yan, Shafat Jahangir, Saniya Deshpande, Thomas Frost, Joanna Mirecki-Millunchick, Zetian Mi, Pallab Bhattacharya
Publikováno v:
Nano Letters. 15:1647-1653
InGaN/GaN disk-in-nanowire heterostructures on silicon substrates have emerged as important gain media for the realization of visible light sources. The nature of quantum confinement in the disks is largely unknown. From the unique nature of the meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38dfd1325d3eebb6c653f9269eacd44a
https://doi.org/10.1021/nl5041989
https://doi.org/10.1021/nl5041989
Publikováno v:
SPIE Proceedings.
GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::776289ab88b88356ace0bda5a4cf7cc4
https://doi.org/10.1117/12.2252981
https://doi.org/10.1117/12.2252981
Autor:
Joanna Mirecki Millunchick, Kevin A. Grossklaus, Pallab Bhattacharya, Martin Strassburg, Shafat Jahangir, Tilman Schimpke
Publikováno v:
IEEE Journal of Quantum Electronics. 50:530-537
We have investigated the properties of In0.51Ga0.49N/GaN disk-in-nanowire light emitting diodes (LEDs) epitaxially grown on silicon substrates by plasma-assisted molecular beam epitaxy. The radiative efficiency of the nanowire ensemble, obtained from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73759801120e8db4de84b3dce5367cf6
https://doi.org/10.1109/jqe.2014.2323952
https://doi.org/10.1109/jqe.2014.2323952
Publikováno v:
IEEE Journal of Quantum Electronics. 50:228-235
We have investigated the dislocation filtering characteristics of InGaN/GaN quantum dot multilayers grown at the substrate/active layer interface along the c-axis. Etch pit dislocation density measurements reveal a reduction in defect density by a fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e134ed28678c1ce27738072e8847ec
https://doi.org/10.1109/jqe.2014.2304954
https://doi.org/10.1109/jqe.2014.2304954
Publikováno v:
Journal of Crystal Growth. 378:566-570
Blue-and green-emitting quantum dots have been characterized and ridge waveguide lasers incorporating such quantum dots into the active region have been realized. The laser heteroscturctures were grown by plasma assisted molecular beam epitaxy. Injec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3556ec2193c46f721cbf6f6b9c34e83a
https://doi.org/10.1016/j.jcrysgro.2012.12.158
https://doi.org/10.1016/j.jcrysgro.2012.12.158
Publikováno v:
Nano Letters. 13:2376-2380
Room-temperature polariton lasing from a GaN-dielectric microcavity is demonstrated with optical excitation. The device is fabricated with a GaN nanowire array clad by Si3N4/SiO2-distributed Bragg reflectors. The nanowire array is initially grown on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3e9479549417c577de61bae27a47d66
https://doi.org/10.1021/nl400060j
https://doi.org/10.1021/nl400060j
Autor:
Kevin A. Grossklaus, Shafat Jahangir, Joanna Mirecki Millunchick, Animesh Banerjee, P. K. Bhattacharya
Publikováno v:
Journal of Crystal Growth. 371:142-147
The coalescence of self-catalyzed GaN nanowires grown on Si substrates has been examined in order to identify the cause of coalescence and to characterize the defect structures resulting from it. Coalescence is found to occur due to both nanowire cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cf1defa6203ef4d202503833e18c27e
https://doi.org/10.1016/j.jcrysgro.2013.02.019
https://doi.org/10.1016/j.jcrysgro.2013.02.019
Ga(Al,In)N nanowires can be grown catalyst-free on silicon and other substrates. The diameter of individual nanowires in an array and the array density can be varied over wide ranges. Single or multiple InGaN disks can be inserted in Ga(Al)N nanowire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78767b3317aaed9f1230ecb9b310e83b
https://doi.org/10.1016/bs.semsem.2016.07.002
https://doi.org/10.1016/bs.semsem.2016.07.002