Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Shabnam Dadgostar"'
Publikováno v:
Optics express. 30(23)
We present a study of the propagation of dark line defects (DLDs) in catastrophically damaged 808 nm laser diodes, based on cathodoluminescence (CL) measurements and laser mode propagation simulations. Room temperature CL images show blurred DLDs run
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfa2375efd44c7dbc0baeccab3e73ff3
https://pubmed.ncbi.nlm.nih.gov/36366713
https://pubmed.ncbi.nlm.nih.gov/36366713
Autor:
Anagha Kamath, Oliver Skibitzki, Davide Spirito, Shabnam Dadgostar, Irene Mediavilla Martinez, Jorge Serrano, Juan Jimenez, Carsten Richter, Martin Schmidbauer, Albert Kwasniewski, Christian Golz, Markus Andreas Schubert, Gang Niu, Fariba Hatami
The integration of both optical and electronic components on a single chip, despite the challenge, holds the promise of compatibility with CMOS technology and high scalability. Among all candidate materials, III-V semiconductor nanostructures are key
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee244bf48b29bac2b7d0c25ac8c0199
https://doi.org/10.21203/rs.3.rs-1901249/v1
https://doi.org/10.21203/rs.3.rs-1901249/v1
Autor:
Manuel Hinojosa, Juan Jiménez, Oscar Martínez, Shabnam Dadgostar, Cantia Belloso Casuso, Iván García
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica
The diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the inte
The diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8b63ab6fdf2d87e44ebfd0fb9404ac6
https://doi.org/10.1007/s11664-020-08176-w
https://doi.org/10.1007/s11664-020-08176-w
Autor:
Miguel Angel González, M. M. Jiménez, Juan Jiménez, A. Moretón, Omar S. Martinez, Shabnam Dadgostar
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica
Upgraded metallurgical-grade silicon solar cells with different ranges of efficiencies have been characterized by light-beam-induced current (LBIC) measurements. The interaction between grain boundaries and metallic impur
Upgraded metallurgical-grade silicon solar cells with different ranges of efficiencies have been characterized by light-beam-induced current (LBIC) measurements. The interaction between grain boundaries and metallic impur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc1ca2f77bc8070d47ce44781e7efa6c
https://doi.org/10.1007/s11664-020-08119-5
https://doi.org/10.1007/s11664-020-08119-5
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5803d2b5f0c896caaff8ed4f9d64f1b6
https://doi.org/10.2139/ssrn.4010835
https://doi.org/10.2139/ssrn.4010835
Autor:
Shabnam Dadgostar, Jose Luis Pura Ruiz, Jorge Serrano Gutierrez, Bruno Lepine, Philippe Schieffer, Juan Jimenez
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Materials Science and Engineering: B
Materials Science and Engineering: B, 2022, 283, pp.115830. ⟨10.1016/j.mseb.2022.115830⟩
instname
Materials Science and Engineering: B
Materials Science and Engineering: B, 2022, 283, pp.115830. ⟨10.1016/j.mseb.2022.115830⟩
Producción Científica
The luminescence of SrTiO3 depends on the sample type, either doped or stoichiometric, as grown or treated, the excitation conditions, and temperature. The origin of the luminescence emissions, blue, green, and infrared,
The luminescence of SrTiO3 depends on the sample type, either doped or stoichiometric, as grown or treated, the excitation conditions, and temperature. The origin of the luminescence emissions, blue, green, and infrared,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca5813220a4284703af828a6a1a901a0
https://doi.org/10.1016/j.mseb.2022.115830
https://doi.org/10.1016/j.mseb.2022.115830
Autor:
Jean-Pierre Landesman, Nebile Isik Goktas, Ray LaPierre, Shahram Ghanad-Tavakoli, Erwine Pargon, Camille Petit-Etienne, Christophe Levallois, Juan Jiménez, Shabnam Dadgostar
Publikováno v:
ECS Meeting Abstracts. :1090-1090
The continuous development of advanced photonic devices based on 3-dimensional structuring of active materials calls for more efforts on characterization techniques. This statement applies, in particular, to processes, such as dry etching applied to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84d53d3fd33fb04724562e5f2c43b1f6
https://doi.org/10.1149/ma2022-01201090mtgabs
https://doi.org/10.1149/ma2022-01201090mtgabs
Autor:
Shabnam Dadgostar, Iván García, Manuel Hinojosa, Andrew Johnson, Ignacio Rey-Stolle, Laura Barrutia
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec969c046ce58ff7a3fcdc2827cfc42e
http://arxiv.org/abs/2104.03288
http://arxiv.org/abs/2104.03288
Autor:
Pere Roca i Cabarrocas, Victor Orejuela, Manuel Hinojosa, Monalisa Ghosh, Iván García, Clara Sanchez, Shabnam Dadgostar, Ignacio Rey-Stolle
Producción Científica
Virtual Ge substrates fabricated by direct deposition of Ge on Si have become a pathway with high potential to attain high-efficiency III-V multijunction solar cells on Si. We study the development of III-V triple junctio
Virtual Ge substrates fabricated by direct deposition of Ge on Si have become a pathway with high potential to attain high-efficiency III-V multijunction solar cells on Si. We study the development of III-V triple junctio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bdab1e2b1762bc8a17361082c5153d1
https://doi.org/10.1109/cde52135.2021.9455736
https://doi.org/10.1109/cde52135.2021.9455736
Autor:
Juan Jiménez, Shabnam Dadgostar, Roberto Fornari, V. Montedoro, A. Torres, Antonella Parisini, Matteo Bosi
Publikováno v:
Materials science and engineering (Lausanne) 264 (2021): 114918-1–114918-7. doi:10.1016/j.mseb.2020.114918
info:cnr-pdr/source/autori:Montedoro V.; Torres A.; Dadgostar S.; Jimenez J.; Bosi M.; Parisini A.; Fornari R./titolo:Cathodoluminescence of undoped and Si-doped ?-Ga2O3 films/doi:10.1016%2Fj.mseb.2020.114918/rivista:Materials science and engineering (Lausanne)/anno:2021/pagina_da:114918-1/pagina_a:114918-7/intervallo_pagine:114918-1–114918-7/volume:264
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
info:cnr-pdr/source/autori:Montedoro V.; Torres A.; Dadgostar S.; Jimenez J.; Bosi M.; Parisini A.; Fornari R./titolo:Cathodoluminescence of undoped and Si-doped ?-Ga2O3 films/doi:10.1016%2Fj.mseb.2020.114918/rivista:Materials science and engineering (Lausanne)/anno:2021/pagina_da:114918-1/pagina_a:114918-7/intervallo_pagine:114918-1–114918-7/volume:264
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Producción Científica
Cathodoluminescence (CL) investigations are performed on nominally undoped and Si-doped ε-Ga2O3 samples grown by metal-organic vapor phase epitaxy on (0001)-Al2O3 substrates, using different carrier gases. All films exhi
Cathodoluminescence (CL) investigations are performed on nominally undoped and Si-doped ε-Ga2O3 samples grown by metal-organic vapor phase epitaxy on (0001)-Al2O3 substrates, using different carrier gases. All films exhi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe1662273cd3527df2d90d685e96f9ce
https://www.sciencedirect.com/science/article/abs/pii/S0921510720304256
https://www.sciencedirect.com/science/article/abs/pii/S0921510720304256