Zobrazeno 1 - 2
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pro vyhledávání: '"Sh.M. Elad"'
Autor:
Sh.M. Elad, M.H. Saad
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 2, Pp 204-209 (2017)
This paper demonstrates theoretical modeling of a quantum well structure optical integrated device. The constituent devices of the developed structure are a Quantum Well Infrared Photodetector (QWIP) to detect the optical infrared signal, a Heterojun
Externí odkaz:
https://doaj.org/article/c20687e005734ec283852c6ffafab0a6
Autor:
Sh.M. Eladl, K.A. Sharshar
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 4, Pp 442-446 (2017)
In this work, the effect of ionizing radiation on static and dynamic behavior of Vertical Cavity Surface Emitting Laser (VCSEL) was investigated numerically. First, the model of dynamic behavior before irradiation has been analyzed based on Convoluti
Externí odkaz:
https://doaj.org/article/98e4700e165b4ca8ab553bea2462d45c