Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sh. Sh. Rashidova"'
Publikováno v:
Journal of Engineering Physics and Thermophysics. 88:781-785
Results of investigating the spectral properties of InP-based polymer composites are given. It is shown that the effects observed in the IR and UV absorption spectra are due to the radiation of the supermolecular structure and to the degree of crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa75e9c08bad12599193b2574d7881ca
https://doi.org/10.1007/s10891-015-1251-1
https://doi.org/10.1007/s10891-015-1251-1
Autor:
Sh. Sh. Rashidova
Publikováno v:
Optics and Spectroscopy. 121:710-712
Temperature dependences of the absorption coefficient in A3B5 crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 1017 electron/cm2 are studied. A low-lying Ev + 0.4 eV center of a nonimpurity origin is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e86abea88bfaa8965b9334f00862bd4c
https://doi.org/10.1134/s0030400x16110175
https://doi.org/10.1134/s0030400x16110175
Publikováno v:
Radiation Effects and Defects in Solids. 168:224-227
In γ-irradiated-doped InP semiconductor superlattices (SLs) in a whole spectral range, we have found negative absorption. Light amplification is attributed to the negative effective mass in the SL mini-band. Stability of the population inversion is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8e33220a0c6e00f465be8cb0698076
https://doi.org/10.1080/10420150.2012.748763
https://doi.org/10.1080/10420150.2012.748763
Publikováno v:
Optical and Quantum Electronics. 48
An experimental work focused on measurement of reflection coefficient of GaP single crystal specimens in the exciton resonance region is described. Occurrence of negative reflection in the specimen with a thickness of 100 μm and initial concentratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2c2d0c7626df1bae493c5764027fcf1
https://doi.org/10.1007/s11082-016-0722-8
https://doi.org/10.1007/s11082-016-0722-8
Autor:
Sh. Sh. Rashidova
Publikováno v:
Journal of Engineering Physics and Thermophysics. 84:479-482
The process of formation of antistructural defects in tin-doped InP crystals exposed to irradiation with gamma quanta of dose 10–100 kGy has been investigated by the radioluminescence method. It has been found that an activation energy of level 0.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b56083bf3b3df48d806909288ba9bc
https://doi.org/10.1007/s10891-011-0494-8
https://doi.org/10.1007/s10891-011-0494-8
Autor:
Sh. Sh. Rashidova
Publikováno v:
Journal of Modern Physics. :1508-1510
In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c925ea08f86cc3845845e8778c76e3e
https://doi.org/10.4236/jmp.2013.411183
https://doi.org/10.4236/jmp.2013.411183
Publikováno v:
Crystal Research and Technology. 39:598-601
The thermoelectric power in In1-xGaxAs (x = 0,01;0,04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 1016- 2 x 1017 el/cm-2 on the interval 80-400 K have been investigated. It is revealed that in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d08ace2d3e87c6ec2a40c2a885f13b17
https://doi.org/10.1002/crat.200310230
https://doi.org/10.1002/crat.200310230
Publikováno v:
Semiconductor Science and Technology. 19:472-474
The thermoelectric power in In1−xGaxAs (x = 0.01; 0.04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 2 × 1017 electrons per cm2 at temperature 300 K has been investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545fcd3e33507fe82721b0d9b05103eb
https://doi.org/10.1088/0268-1242/19/3/032
https://doi.org/10.1088/0268-1242/19/3/032
Publikováno v:
Crystal Research & Technology; Jul2004, Vol. 39 Issue 7, p598-601, 4p