Výsledky vyhledávání - "Sh. S. Ismayilov"

On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions

Autor: M. I. Murguzov, Sh. S. Ismayilov, J. I. Huseynov, R. F. Mamedova, E. M. Gojayev

Publikováno v: Semiconductors. 51:153-157

The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cbf7b9fab490c0b1634af9a5da9e89c4
https://doi.org/10.1134/s1063782617020075

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The thermal properties of SnSe and Sm1−xCexSnSe2 (x = 0.02–0.5) compounds

Autor: V. A. Abdurahmanova, N. M. Abdullaev, Sh. S. Ismayilov, M. N. Mirzayev

Publikováno v: International Journal of Modern Physics B. 34:2050167

SnSe and [Formula: see text] compounds based on SnSe have been synthesized. Thermal properties of SnSe and [Formula: see text] compounds within [Formula: see text] concentration ranges of Ce atoms have been investigated using Differential Thermal Ana

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50be8965d2566f579cb79049f07f4318
https://doi.org/10.1142/s0217979220501672

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Electrophysical properties of the (SnSe)1−x–(SmSe)x solid solutions at high and low temperature

Autor: V. A. Abdurahmanova, Sh. S. Ismayilov, N. M. Abdullaev

Publikováno v: Modern Physics Letters B. 34:2050008

The temperature range of [Formula: see text] = 77–770 K in the system alloys: Holl coefficient [Formula: see text], thermo-emf [Formula: see text], electric conductivity [Formula: see text], measured [Formula: see text]-density of components and an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a79d9a2bae5daabe71246c369cb9f38
https://doi.org/10.1142/s0217984920500086

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Specific features of self-compensation in Er x Sn1 − x Se solid solutions

Autor: J. I. Huseynov, M. I. Murguzov, Sh. S. Ismayilov

Publikováno v: Semiconductors. 47:323-326

The effect of doping and degree of compensation on the conductivity activation energy ΔEi in ErxSn1 − xSe has been investigated. The carrier concentration decreases at a low doping level in the case of low and moderate compensations. It is found t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2ceba52c014d09ce0ba0af0faa72c71
https://doi.org/10.1134/s106378261303010x

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