Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Sh. O. Eminov"'
Autor:
A. Sh. Aliyev, Sh. O. Eminov, A. N. Azizova, V.A. Majidzade, Dilgam Babir Tagiyev, S. F. Jafarova, I. Kasimogli
Publikováno v:
Inorganic Materials. 57:331-336
Thin n-type MoS2 films have been produced by electrochemical deposition from aqueous electrolytes and some of their electrical and photoelectrochemical properties have been studied using advanced characterization techniques (X-ray diffraction, scanni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c3544bc8fe3123b9832f1ca7d7e764
https://doi.org/10.1134/s0020168521040105
https://doi.org/10.1134/s0020168521040105
Autor:
Sh. O. Eminov
Publikováno v:
Semiconductors. 50:1005-1009
The optical absorption coefficient α in p +-InSb layers (with hole concentrations of p ≈ 1 × 1017–1.2 × 1019 cm–3), grown by liquid-phase epitaxy on p-InSb substrates, is measured in the spectral range of 5-12 µm at 90 K, and the impurity p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec4ce98c5d2165cab2cba5fb5ee34205
https://doi.org/10.1134/s1063782616080108
https://doi.org/10.1134/s1063782616080108
Autor:
A. Sh. Aliyev, Dilgam Babir Tagiyev, A. A. Rajabli, Kh. D. Jalilova, Mahmoud Elrouby, N. J. Ismayilov, N. Sh. Soltanova, I. I. Gurbanov, J. A. Guliyev, G. Kh. Mamedova, I. S. Hasanov, Sh. O. Eminov
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:9853-9860
The systems of indium tin oxide (ITO)/nano-porous anodized aluminum oxide Al2O3 (AAO) and ITO/CdS nano-structured were fabricated on transparent glass substrates by using radio frequency magnetron sputtering and electrochemical deposition. The glass/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50da498dee0ebfef824131ee9d48fed6
https://doi.org/10.1007/s10854-016-5053-9
https://doi.org/10.1007/s10854-016-5053-9
Publikováno v:
Inorganic Materials. 47:340-344
This paper examines etching of the polar planes (111)In and $$ \left( {\bar 1\bar 1\bar 1} \right) $$ Sb of InSb wafers for liquid phase epitaxy in various etchants after mechanical and chemomechanical polishing. We describe procedures for polishing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e34bb2beed3356e24105b2eac1940cc
https://doi.org/10.1134/s0020168511040091
https://doi.org/10.1134/s0020168511040091
Publikováno v:
Inorganic Materials. 46:714-717
This paper examines the effect of polishing procedure on the surface quality of Cd0.96Zn0.04Te substrates for CdxHg1 − xTe liquid phase epitaxy. Two polishing procedures are tested: stepwise polishing involving abrasive, chemomechanical, and chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3aa942d79212e14c1318ab20764132b
https://doi.org/10.1134/s0020168510070058
https://doi.org/10.1134/s0020168510070058
Autor:
Sh. O. Eminov, A. A. Radjabli
Publikováno v:
Instruments and Experimental Techniques. 53:298-300
An improved slider-type graphite cassette for liquid phase epitaxy in a horizontal reactor is described. The cassette ensures the complete removal of the remains of the solution-melt from the surface of an epitaxial layer owing to precise adjustment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f88d879f4dae68580f3de82f3653ae
https://doi.org/10.1134/s0020441210020260
https://doi.org/10.1134/s0020441210020260
Publikováno v:
SPIE Proceedings.
From the point of view of its fundamental properties, solid solution Hg1-xCdxTe (0 less than or equal to x less than or equal to l) (MCT) is one of very attractive materials of infrared optoelectronics and has received considerable attention over the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f12d1434a36c31d30baf43ee36ccbbdf
https://doi.org/10.1117/12.742619
https://doi.org/10.1117/12.742619
Publikováno v:
SPIE Proceedings.
The principle of construction of the multi-channel IR-CCD on the basis of vary-gap semiconductor have been considered. On an example of HgTe-CdTe solid solutions is shown, that grown epitaxial layers repeats of substrate form at using semiconductor s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7e633cd41f458fee8d99334fb3e9af
https://doi.org/10.1117/12.407722
https://doi.org/10.1117/12.407722