Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Sh. Makhkamov"'
Autor:
A. B. Normurodov, A. P. Mukhtarov, F. T. Umarova, M. Yu. Tashmetov, Sh. Makhkamov, N. T. Sulaymonov
Publikováno v:
Condensed Matter Physics, Vol 25, Iss 1, p 13301 (2022)
Stability and charge states of vacancy in Si_29 and Si_38 clusters have been calculated by non-conventional tight-binding method and molecular dynamics. Based on the theoretical calculations, it was shown that the vacancy in pure dimerized clusters i
Externí odkaz:
https://doaj.org/article/dd8a039f28be41cfb18d6bae3a517b63
Publikováno v:
Applied Solar Energy. 57:188-191
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8462948ca7fe9ef22ac9340c85ca364
https://doi.org/10.3103/s0003701x21030099
https://doi.org/10.3103/s0003701x21030099
Autor:
A. B. Normurodov, Sh. Makhkamov, M. Yu. Tashmetov, A. E. Kiv, O. Ismailova, F. T. Umarova, N. T. Sulaymonov
Publikováno v:
Advanced Nanomaterials for Detection of CBRN ISBN: 9789402420296
The development of nanotechnology has led to the use of various nanostructures in order to modify and produce new materials. In this regard, there is an increasing interest in studying the properties of nanostructures, methods for their preparation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3774f6b6c791405ecc98adadebbd422d
https://doi.org/10.1007/978-94-024-2030-2_7
https://doi.org/10.1007/978-94-024-2030-2_7
Autor:
A. B. Normurodov, Kh. M. Kholmedov, Sh. Makhkamov, M. Yu. Tashmetov, F. T. Umarova, N. T. Sulaymanov, A. V. Khugaev
The paper considers the computer model of silicon clusters doped with boron and phosphorus, and the effect of hydrogen on their structure and energy parameters. While calculating nanostructure formation, the model assumes hydrogenated Si29 clusters w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2c8044933b2f7fedef8db2de65b7916
http://essuir.sumdu.edu.ua/handle/123456789/69951
http://essuir.sumdu.edu.ua/handle/123456789/69951
Autor:
N. A. Tursunov, M. N. Erdonov, Sh. Makhkamov, A. R. Sattiev, R. A. Muminov, Kh. M. Kholmedov, M. Karimov, K. P. Abdurakhmanov
Publikováno v:
Applied Solar Energy. 49:185-191
The influence of y-radiation on the photoelectric characteristics of solar cells (SCs) made of zincdoped silicon has been studied. It has been proved that the degradation degree of SC photoelectric characteristics depended on the concentration of zin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfb2f0a1772a4e360c8fcaa12afac365
https://doi.org/10.3103/s0003701x13040117
https://doi.org/10.3103/s0003701x13040117
Influence of the conductivity type of silicon on the process of radiation degradation of solar cells
Autor:
R. A. Muminov, N. A. Tursunov, Sh. Makhkamov, Kh. M. Kholmedov, A. R. Sattiev, M. Karimov, M. N. Erdonov
Publikováno v:
Applied Solar Energy. 49:62-66
The effectiveness of introduction of radiation defects (RDs) into the base of solar cells (SCs) during irradiation by γ-quanta 60Co depending on resistivity and type of monocrystalline silicon and the effect of induced RDs on photoelectric character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb15c8fce4385f550b4b36ae10d3025
https://doi.org/10.3103/s0003701x13020084
https://doi.org/10.3103/s0003701x13020084
Publikováno v:
Russian Physics Journal. 54:589-593
The influence of the defects induced by fast-neutron irradiation on the rate of charge-carrier removal in nuclear-doped silicon (p-Si ) and a test p-Si sample is studied by measuring the Hall coefficient and resistivity at room temperature. It is sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd5337928d27a82ea65f1cca17e15e3
https://doi.org/10.1007/s11182-011-9656-6
https://doi.org/10.1007/s11182-011-9656-6
Autor:
N. A. Tursunov, Kh. M. Kholmedov, A. R. Sattiev, M. Karimov, M. N. Erdonov, S. Zainabidinov, Sh. Makhkamov
Publikováno v:
Russian Physics Journal. 53:499-503
Electric and structural methods are used to investigate formation of impurity-defective complexes in silicon doped with palladium. It is demonstrated that acceptor levels E C – 0.18 and E v + 0.34 eV detected in silicon during incorporation of pall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39548b1b83fc472c765a8224f61f32da
https://doi.org/10.1007/s11182-010-9448-4
https://doi.org/10.1007/s11182-010-9448-4
Autor:
N. A. Tursunov, K. A. Begmatov, A. Kh. Sadikov, M. Karimov, A. K. Karakhodzhaev, Sh. A. Makhmudov, Sh. Makhkamov
Publikováno v:
Russian Physics Journal. 52:448-451
The relaxation kinetics of photoconductivity in neutron-doped silicon (NDS) of the p-type is discussed. It is found that the relaxation process in the compensated p-Si differs from that in the reference p-Si sample. The difference is explained on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaae77ede2ca1ded4dfad91cd6d5846e
https://doi.org/10.1007/s11182-009-9253-0
https://doi.org/10.1007/s11182-009-9253-0
Autor:
Sh. Makhkamov, A. Fazilov, T. T. Riskiev, Sh. I. Klychev, M. M. Mansurov, S. A. Bakhramov, A. Kasimov, A. S. Saribaev, E. J. Mukhamediev, A. A. Abdurakhmanov, Sh. D. Paiziev
Publikováno v:
Applied Solar Energy. 44:93-96
The first results of experimental investigations concerning laser radiation generation with pumping by concentrated solar radiation flux at the Big Solar Furnace of Materials Science Institute of Uzbek Academy of Sciences are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95d2532207276764d4a56adf6b86fbd8
https://doi.org/10.3103/s0003701x08020072
https://doi.org/10.3103/s0003701x08020072