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pro vyhledávání: '"Sh. Machkamov"'
Autor:
F. S. Akramov, M. Kаrimov, Sh. А. Маchmudov, Sh. Machkamov, S. А. Bakiev, А. R. Sattiev, N. А. Тursunov
Publikováno v:
Russian Physics Journal. 57:63-68
Nature and types of structural defects in the p-type silicon doped with copper are determined by the methods of infrared microscopy and measuring of the specific resistivity, concentration, and lifetime (τ) of charge carriers. It is found that the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbd5d4841047059273b287c15a3ba16
https://doi.org/10.1007/s11182-014-0208-8
https://doi.org/10.1007/s11182-014-0208-8
