Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sh. M. Eladl"'
Autor:
Abdelrahman Said, Mohamed H. Saad, Sh. M. Eladl, Z. M. Salem Elbarbary, Ahmed I. Omar, M. Attya Saad
Publikováno v:
IEEE Access, Vol 11, Pp 3955-3969 (2023)
Faults can seriously damage high-voltage (HV) power systems, particularly if they occur on the long overhead transmission line (OHTL) that connects the nuclear power plant (NPP) to the electrical grid. Finding OHTL problems quickly and accurately is
Externí odkaz:
https://doaj.org/article/d076c10966da49e7b98cb632cf69f12e
Publikováno v:
Journal of Thermoplastic Composite Materials. :089270572311674
This study introduces the synthesis of graphite-carbon nitrite (g-C3N4) using thermal treatment of urea. The prepared powder is treated to generate nanoparticles. The structure and grain size of the g-C3N4 have been obtained via X-ray diffraction (XR
Autor:
M. A. Ashour, Sh. M. Eladl
Publikováno v:
Journal of Atomic, Molecular, and Optical Physics. 2011:1-4
The temporal response of an optical integrated device is theoretically analysed. The device is composed of a Metal-Semiconductor-Metal (MSM) Photodetector and a Light Emitting Diode (LED). The analysis is based on the frequency response of the consti
Autor:
Sh. M. Eladl
Publikováno v:
Microelectronics Journal. 40:193-196
The ionizing radiation effect on the static and dynamic behavior of an optoelectronic-integrated device composed of a hetrojunction phototransistor and light-emitting diode is studied theoretically. First, the device characteristics before irradiatio
Autor:
Sh. M. Eladl
Publikováno v:
Microelectronics Journal. 39:1649-1653
In this paper, the effect of interface recombination and self-absorption within the light emitting diode (LED) active region on the efficiency of QWIP-HBT-LED integrated device is considered. This device is composed of a quantum well infrared photode
Publikováno v:
Radiation Effects and Defects in Solids. 159:453-460
Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise tim
Publikováno v:
Microelectronics Journal. 35:585-589
This paper is devoted to the evaluation of the transient performance as well as testing the stability of a new version of optoelectronic integrated devices. This version is composed of a resonant cavity enhanced heterojunction phototransistor and a l
Publikováno v:
Proceedings of the Twentieth National Radio Science Conference (NRSC'2003) (IEEE Cat. No.03EX665).
In this paper, the transient response of the excited photocurrent inside an optoelectronic integrated device (OEID) is analyzed. The device is composed of a heterojunction phototransistor (HPT) and a laser diode (LD). The expressions describing the t
Publikováno v:
Proceedings of the Twentieth National Radio Science Conference (NRSC'2003) (IEEE Cat. No.03EX665).
The transient behavior of a new structure of optoelectronic integrated device (OEID) is studied theoretically. The device is composed of resonant cavity enhanced heterojunction phototransistor (RCE-HPT), and light emitting diode (LED). This version o