Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Sh. M. Eladl"'
Autor:
Abdelrahman Said, Mohamed H. Saad, Sh. M. Eladl, Z. M. Salem Elbarbary, Ahmed I. Omar, M. Attya Saad
Publikováno v:
IEEE Access, Vol 11, Pp 3955-3969 (2023)
Faults can seriously damage high-voltage (HV) power systems, particularly if they occur on the long overhead transmission line (OHTL) that connects the nuclear power plant (NPP) to the electrical grid. Finding OHTL problems quickly and accurately is
Externí odkaz:
https://doaj.org/article/d076c10966da49e7b98cb632cf69f12e
Publikováno v:
Journal of Thermoplastic Composite Materials. :089270572311674
This study introduces the synthesis of graphite-carbon nitrite (g-C3N4) using thermal treatment of urea. The prepared powder is treated to generate nanoparticles. The structure and grain size of the g-C3N4 have been obtained via X-ray diffraction (XR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c662a551ee8acf5f4c947be61a33ada0
https://doi.org/10.1177/08927057231167415
https://doi.org/10.1177/08927057231167415
Autor:
M. A. Ashour, Sh. M. Eladl
Publikováno v:
Journal of Atomic, Molecular, and Optical Physics. 2011:1-4
The temporal response of an optical integrated device is theoretically analysed. The device is composed of a Metal-Semiconductor-Metal (MSM) Photodetector and a Light Emitting Diode (LED). The analysis is based on the frequency response of the consti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb48e97df1aa3f3073b9c1121597019e
https://doi.org/10.1155/2011/756758
https://doi.org/10.1155/2011/756758
Autor:
Eladl, Sh. M.1 shaban_45@yahoo.com, Sharshar, K. A.1
Publikováno v:
International Journal of Nanoelectronics & Materials. Jan2023, Vol. 16 Issue 1, p53-61. 9p.
Autor:
Sh. M. Eladl
Publikováno v:
Microelectronics Journal. 40:193-196
The ionizing radiation effect on the static and dynamic behavior of an optoelectronic-integrated device composed of a hetrojunction phototransistor and light-emitting diode is studied theoretically. First, the device characteristics before irradiatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c5c5f980586ed3054588a54ee3e63d
https://doi.org/10.1016/j.mejo.2008.07.008
https://doi.org/10.1016/j.mejo.2008.07.008
Autor:
Sh. M. Eladl
Publikováno v:
Microelectronics Journal. 39:1649-1653
In this paper, the effect of interface recombination and self-absorption within the light emitting diode (LED) active region on the efficiency of QWIP-HBT-LED integrated device is considered. This device is composed of a quantum well infrared photode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb2f653aef51f4d771d7a7267a16b825
https://doi.org/10.1016/j.mejo.2008.02.010
https://doi.org/10.1016/j.mejo.2008.02.010
Publikováno v:
Radiation Effects and Defects in Solids. 159:453-460
Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d3c19db98a2b7f973dd832d60bdb8e0
https://doi.org/10.1080/10420150410001670297
https://doi.org/10.1080/10420150410001670297
Publikováno v:
Microelectronics Journal. 35:585-589
This paper is devoted to the evaluation of the transient performance as well as testing the stability of a new version of optoelectronic integrated devices. This version is composed of a resonant cavity enhanced heterojunction phototransistor and a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eae9f015caf721c2ea82c9f9feea625
https://doi.org/10.1016/j.mejo.2004.03.001
https://doi.org/10.1016/j.mejo.2004.03.001
Autor:
Eladl, Sh. M.1 shaban_45@yahoo.com, Sharshar, K. A.1 ksharshar@yahoo.com, Saad, M. H.1 m.hassansaad@gmail.com
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2022, Vol. 25 Issue 2, p196-202. 7p.
Autor:
Eladl, Sh. M.1 shaban_45@yahoo.com, Saad, M. H.1
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2022, Vol. 25 Issue 1, p083-089. 7p.