Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sh. Kh. Dzhuraev"'
Autor:
T. S. Kamilov, A. S. Rysbaev, V. V. Klechkovskaya, A. S. Orekhov, Sh. Kh. Dzhuraev, A. S. Kasymov
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 2, Iss 4, Pp 360-366 (2021)
The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn 4 Si 7 and silicon doped with manganese (Si ) on the photoelectric properties of heterostructures. The role of the initi
Externí odkaz:
https://doaj.org/article/0ced00b9d18845c8bc4891a2546edfe4
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 2, Iss 4, Pp 367-376 (2021)
In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribu
Externí odkaz:
https://doaj.org/article/57a592ae235a47e4aa3a60f7df0705fd
Publikováno v:
Russian Physics Journal. 35:1161-1164
A combined description of the pp- and pp-scatterings is provided in the wide range of energies\(\sqrt s = 4 - 1800{\text{ GeV}}\) and for a momentum transfer -t between 0 and 10 GeV2, on the basis of the inelastic overlap function model. The calculat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c7b7d4f502c295eeac4805f11c6e02
https://doi.org/10.1007/bf00559370
https://doi.org/10.1007/bf00559370