Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Sh Sh Sharofidinov"'
Publikováno v:
Mechanics of Solids.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55344e967247a7b84fea10f7c6afa4a
https://doi.org/10.3103/s0025654422601392
https://doi.org/10.3103/s0025654422601392
Autor:
P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Lenshin, Yu. Yu. Khudyakov, I. N. Arsentiev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, Tatiana Prutskij
Publikováno v:
Semiconductors. 55:995-1001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64df579fdf860bb4bc350aeda4a4eef8
https://doi.org/10.1134/s1063782621080170
https://doi.org/10.1134/s1063782621080170
Publikováno v:
Physics of the Solid State. 63:924-931
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d87b1ed821667cb2b32e182431c3ba6
https://doi.org/10.1134/s1063783421060214
https://doi.org/10.1134/s1063783421060214
Autor:
A.V. Solnyshkin, O. N. Sergeeva, O. A. Shustova, Sh. Sh. Sharofidinov, M. V. Staritsyn, E. Yu. Kaptelov, S. A. Kukushkin, I. P. Pronin
Publikováno v:
Technical Physics Letters. 47:466-469
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d690e41f7004f209f97e3ae6a84227ea
https://doi.org/10.1134/s1063785021050138
https://doi.org/10.1134/s1063785021050138
Autor:
E. Yu. Kaptelov, O. P. Kazarova, Sh. Sh. Sharofidinov, Alexander V. Solnyshkin, O. N. Sergeeva, S. A. Kukushkin, I. P. Pronin, E. N. Mohov
Publikováno v:
Ferroelectrics. 576:55-61
The results of the dielectric, pyroelectric, and piezoelectric studies of aluminum nitride single crystals are presented in this paper. The crystals were grown by sublimation and hybrid-chloride va...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::442dcda1598f61f85102cddc29985900
https://doi.org/10.1080/00150193.2021.1888260
https://doi.org/10.1080/00150193.2021.1888260
Autor:
Andrey Osipov, Sh. Sh. Sharofidinov, S. A. Kukushkin, A. V. Kandakov, A. S. Grashchenko, E. V. Osipova, K. P. Kotlyar, Evgeniy Ubyivovk
Publikováno v:
Physics of the Solid State. 63:442-448
The phenomenon of self-organized change in the composition of epitaxial layers of the AlxGa1 ‒ xN solid solution during their growth by chloride-hydride epitaxy on SiC/Si(111) hybrid substrates is discovered using spectral ellipsometry, Raman spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2415b3a93346929eeb8827ea1f455f52
https://doi.org/10.1134/s1063783421030100
https://doi.org/10.1134/s1063783421030100
Publikováno v:
Technical Physics Letters. 46:539-542
The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si(001) and hybrid SiC/Si(001) substrates without cracks has been investigated. It is found that an AlN layer grown on the Si substrate is extended, whereas an A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88e77e16558cccdb7d33281126ef8195
https://doi.org/10.1134/s106378502006005x
https://doi.org/10.1134/s106378502006005x
Publikováno v:
Technical Physics. 65:428-433
We investigate the possibility of integration of epitaxial SiC and AlN technologies using opposite faces of the common SiC substrate (AlN epitaxy is performed at the final stage), preserving the initial quality of the preliminarily prepared SiC layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::492d7c14195f5e97eb51b034593a9054
https://doi.org/10.1134/s1063784220030184
https://doi.org/10.1134/s1063784220030184
Autor:
S. A. Kukushkin, Sh. Sh. Sharofidinov
Publikováno v:
Physics of the Solid State. 61:2342-2347
The main principles of a new method of growing bulk single-crystal AlN, AlGaN, and GaN films with thickness from 100 μm and more on silicon substrates with a buffer silicon carbide layer with its subsequent detachment from Si substrates are presente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23c8d3dc8b11870dcf0bc014df2b8015
https://doi.org/10.1134/s1063783419120254
https://doi.org/10.1134/s1063783419120254
Autor:
K. Yu. Shubina, A. D. Buravlev, T. N. Berezovskaya, Andrey Osipov, S. N. Timoshnev, A. M. Mizerov, D. V. Mokhov, S. A. Kukushkin, Sh. Sh. Sharofidinov
Publikováno v:
Physics of the Solid State. 61:2277-2281
The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of GaN films on hybrid SiC/Si(111) substrates by nitrogen plasma-assisted molecular bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89f7baa5307276732020c86e2589a825
https://doi.org/10.1134/s106378341912031x
https://doi.org/10.1134/s106378341912031x