Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Sg. Fujita"'
Publikováno v:
SOLID STATE COMMUNICATIONS. 129(1):31-35
Photoluminescence (PL) spectra and time-resolved PL are measured from around 10 to 300 K for the InGaN/GaN single quantum wells (SQWs) with well widths of 1.5, 2.5, 4 and 5 nm. For the SQWs with the well widths of 1.5 and 2.5 nm, the peak position of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae33ca67428a1892acc8e75b87e0062f
http://hdl.handle.net/2433/7058
http://hdl.handle.net/2433/7058
Autor:
M. S. Kim, Shigeya Kimura, Yoichi Kawakami, Shuichi Emura, Akio Kaneta, X J Li, Hajime Asahi, Shigehiko Hasegawa, Yi-Kai Zhou, Sg. Fujita
Publikováno v:
JOURNAL OF PHYSICS-CONDENSED MATTER. 16(48):S5743-S5748
Optical properties of GaCrN, GaDyN and GaGdN have been studied by means of photoluminescence spectroscopy having spectral and time resolution. Photoluminescence (PL) emission at around 3.29 eV was determined to be the band-to-band transition of GaCrN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14df515fddaa227118b619d4a2e39fab
http://hdl.handle.net/2433/8692
http://hdl.handle.net/2433/8692
Autor:
Kunimichi Omae, Yoichi Kawakami, A. Shikanai, Sg. Fujita, Takashi Mukai, Yukio Narukawa, Kazunobu Kojima
Publikováno v:
physica status solidi (b). 240:392-395
We investigated the hot carrier dynamics in InGaN multi-quantum wells using photoluminescence, time-resolved photoluminescence (TRPL) and white-light pump and probe methods at room temperature. The pump and probe spectra or ΔOD spectra have not refl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68296bb4d6d75b2bbefe995a1b0ddb0b
https://doi.org/10.1002/pssb.200303256
https://doi.org/10.1002/pssb.200303256
Autor:
Kunimichi Omae, A. Shikanai, Sg. Fujita, Giichi Marutsuki, Koichi Okamoto, Yoichi Kawakami, Takashi Mukai, Yukio Narukawa, Akio Kaneta
Publikováno v:
physica status solidi (b). 240:337-343
Optical properties induced by two major effects, potential fluctuation and piezoelectric fields, have been assessed to interpret the emission mechanism in low-dimensional nitride semiconductors because the former leads to the exciton/carrier localiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f5f57efde5f14f1dfb008a8d3fabd1
https://doi.org/10.1002/pssb.200303427
https://doi.org/10.1002/pssb.200303427
Publikováno v:
Journal of Crystal Growth. 248:25-30
In metal-organic vapor phase epitaxy (MOVPE), ZnO growth modes either for nanorod structures or for high-quality flat layers have been successfully controlled by varying the growth conditions. The nanorod structures of ZnO, e.g., 10−50 nm in diamet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a4eaa07dc58a784f2e643d3494585bb
https://doi.org/10.1016/s0022-0248(02)01843-2
https://doi.org/10.1016/s0022-0248(02)01843-2
Autor:
A. Shikanaia, Kouji Hazu, H. Fukahori, Takayuki Sota, Yoichi Kawakami, Tomotsugu Mitani, Sg. Fujita, Takashi Mukai
Publikováno v:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 235(1):26-30
Photoluminescence and reflectance spectra of Si-, Ge- and Sn-doped GaN epilayers grown on sapphire substrates at 10 K have been investigated, by which ionization energies on the Ga site were determined as 29, 30 and 33 meV, respectively. To investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd10c4d773913e2b5055cbe3af93b574
http://hdl.handle.net/2433/7230
http://hdl.handle.net/2433/7230
Publikováno v:
physica status solidi (c). :434-437
The effects of indium doping on the structural properties of hexagonal GaN grown on GaAs{114}B substrates with AlAs intermediate layers are investigated. It is revealed that the In doping allows us to control the residual strain in GaN, and that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c02343d4d95fed2b4d67cc6451f61060
https://doi.org/10.1002/pssc.200390081
https://doi.org/10.1002/pssc.200390081
Autor:
Yoichi Kawakami, Akio Kaneta, Giichi Marutsuki, Tomotsugu Mitani, Sg. Fujita, Yukio Narukawa, Takashi Mukai, G. Shinomiya
Publikováno v:
physica status solidi (a). 192:110-116
Electroluminescence (EL) mapping has successfully been performed for In x Ga 1-x N single quantum well (SQW)-based light emitting diodes (LEDs) by employing scanning near-field optical microscopy (SNOM) at room temperature. The relative EL intensity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b6039a84df167344bf92e27ba0d97f9
https://doi.org/10.1002/1521-396x(200207)192:1<110::aid-pssa110>3.0.co
https://doi.org/10.1002/1521-396x(200207)192:1<110::aid-pssa110>3.0.co
Publikováno v:
Journal of Crystal Growth. :553-557
Zinc oxide (ZnO) layers were homoepitaxially grown by metalorganic vapor phase epitaxy (MOVPE) on ZnO layers on sapphire as well as on Si. MOVPE-ZnO on ZnO/sapphire pretreated at 1000°C exhibited in photoluminescence at 15 K a narrowing of line widt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c2f236d7ef45ec331939921047a8b35
https://doi.org/10.1016/s0022-0248(01)01979-0
https://doi.org/10.1016/s0022-0248(01)01979-0
Publikováno v:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 190(1):93-98
Carrier dynamics in two types of InGaN-based semiconductors were investigated using nondegenerated pump and probe spectroscopy. The samples consist of an In 0.1 Ga 0.9 N active layer, 30 nm thick (sample a) or an In 0.1 Ga 0.9 N/GaN multiple quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94ceb489d20d03468e09699265222443
http://hdl.handle.net/2433/6760
http://hdl.handle.net/2433/6760