Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Sezai Asubay"'
Publikováno v:
Molecules, Vol 14, Iss 4, Pp 1537-1545 (2009)
Relaxometric studies are still of scientific interest due to their use in medicine and biology. In this study, proton T1 and T2 relaxivities of Mn(II), Cu(II) and Cr(III) in water were determined in the presence and absence of various proteins (album
Externí odkaz:
https://doaj.org/article/40e18a35ccfb41cc88eb573fb65220d0
Publikováno v:
Silicon. 15:451-458
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::895e20e8eaedc25cb086d118f42594bf
https://doi.org/10.1007/s12633-022-02018-6
https://doi.org/10.1007/s12633-022-02018-6
Autor:
Abdulmecit Turut, Sezai Asubay
Publikováno v:
Australian Journal of Electrical and Electronics Engineering. 17:278-285
The temperature-dependent capacitance-voltage (C-V) and current-voltage (I–V) characteristics of the Ti/p-InP/ZnAu Schottky contacts were investigated in this study. The current across a metal-semi...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d24e8b71bb1992d4554979fefed9523
https://doi.org/10.1080/1448837x.2020.1857564
https://doi.org/10.1080/1448837x.2020.1857564
WOS:000701596600003 Cu2Zn(Sn1-xGex)S-4 thin films (where x = 0, 0.25, 0.50, 0.75, and 1) were deposited by spin coating technique and annealed under 30 and 40 ccm H2S:Ar (1:9) flows to understand the influence of Ge atom content ratio and H2S flow ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd1afdb28f23935aef80d073392b10fe
https://hdl.handle.net/11468/7897
https://hdl.handle.net/11468/7897
Autor:
Honar Salah Ahmed, Yusuf Selim Ocak, Ahmet Tombak, Sezai Asubay, Cihat Bozkaplan, Mustafa Fatih Genisel
Publikováno v:
Optik. 142:644-650
MoS2 is one of the most promising materials due to its exciting properties. Al/MoS2/n–Si heterojunction diode was acquired via the formation of a MoS2 thin film on n–Si semiconductor using radio frequency (RF) sputtering technique and an evaporat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::394e913b9a18c6e315534406a0d524f7
https://doi.org/10.1016/j.ijleo.2017.06.037
https://doi.org/10.1016/j.ijleo.2017.06.037
Publikováno v:
Materials Science in Semiconductor Processing. 28:94-97
A Mo/n-type 6H-SiC/Ni Schottky barrier diode (SBD) was fabricated by sputtering Mo metal on n-type 6H-SiC semiconductor. Before the formation of Mo/n-type 6H-SiC SBD, an ohmic contact was formed by thermal evaporation of Ni on n-type 6H-SiC and annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b5b7800dc793334c3788c261553bcac
https://doi.org/10.1016/j.mssp.2014.07.003
https://doi.org/10.1016/j.mssp.2014.07.003
Publikováno v:
Materials Science in Semiconductor Processing. 24:187-192
A Coumarin 30/p-Si organic-inorganic device was fabricated by forming a Coumarin 30 thin film on a p-Si semiconductor. The resulting structure had excellent rectifying properties. Electrical parameters of the structure were determined from current–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c54b26da384fd0bcab4a42367c1a4bd
https://doi.org/10.1016/j.mssp.2014.03.004
https://doi.org/10.1016/j.mssp.2014.03.004
Publikováno v:
AIP Conference Proceedings.
An organic-inorganic junction was fabricated by forming [Ru(Cy2PNHCH2-C4H3O)(η6-p-cymene)Cl2] complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. It was seen that the structure had perfect rectification prope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc386a072e44ada5d9f74dbff6b1b81
https://doi.org/10.1063/1.4944304
https://doi.org/10.1063/1.4944304
Autor:
Sezai Asubay
Publikováno v:
Microelectronic Engineering. 88:109-112
In this study, it has been investigated the electrical characteristics of identically prepared Al/p-InP Schottky diodes. The barrier heights (BHs) and ideality factors of all devices have been calculated from the electrical characteristics. Although
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f485be5b81770d7fde8aad2fa6a708c
https://doi.org/10.1016/j.mee.2010.09.009
https://doi.org/10.1016/j.mee.2010.09.009
Autor:
Sezai Asubay, Ömer Güllü
Publikováno v:
International Journal of Electronics. 97:973-983
The electrical properties of identically prepared Fe/p-InP (29 dots in total) Schottky barrier diodes on the same p-type InP single crystal have been studied in this article. The effective Schottky barrier heights (SBHs) and ideality factors obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfc3b856a2e68a9601d7caa81d4c4432
https://doi.org/10.1080/00207211003733304
https://doi.org/10.1080/00207211003733304