Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Sezai, Elagoz"'
Autor:
Smiri, Badreddine, Ben Arbia, Marwa, Ilkay, Demir, Saidi, Faouzi, Othmen, Zied, Dkhil, Brahim, Ismail, Altuntas, Sezai, Elagoz, Hassen, Fredj, Maaref, Hassen
Publikováno v:
In Materials Science & Engineering B December 2020 262
Autor:
Sezai Elagoz
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XIX.
Autor:
Sezai Elagoz, Ismail Altuntas
Publikováno v:
International Journal of Innovative Engineering Applications. 5:6-10
Effect of different nucleation layer temperatures (LT-GaN growth temperature) on the properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ reflectance curves demonstrate that higher LT-GaN growth temperatures cause fast co
Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width
Publikováno v:
Cumhuriyet Science Journal. 40:471-476
Herein, the electronic properties of double Ga1-x Alx As/GaAs quantum wells (A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined related to the well width. The wave functions, the subband energies and the probability densities o
Autor:
Emre Gür, Ilkay Demir, Hadis Morkoç, V. Avrutin, Oguz Gulseren, Ümit Özgür, V. N. Sheremet, Muhammet Genc, Ismail Altuntas, Sezai Elagoz, Atilla Aydinli
Publikováno v:
Proceedings of SPIE-The International Society for Optical Engineering
Date of Conference: 1-6 February 2020 Conference Name: SPIE OPTO, 2020: Gallium Nitride Materials and Devices XV 2020 In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ae6b3ab21d242bf909293e644e4769d
https://aperta.ulakbim.gov.tr/record/9085
https://aperta.ulakbim.gov.tr/record/9085
Publikováno v:
Volume: 41, Issue: 3 565-570
Cumhuriyet Science Journal
Cumhuriyet Science Journal, Vol 41, Iss 3, Pp 565-570 (2020)
Cumhuriyet Science Journal
Cumhuriyet Science Journal, Vol 41, Iss 3, Pp 565-570 (2020)
Herein, the electronic characteristics of asymmetric triple Ga1-x Alx As/GaAs quantum wells (A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined as dependent on Al and In concentration. The energy levels, the wave functions and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f8aee94d9cc17ad9e62b6c80c8e83c6
https://dergipark.org.tr/tr/pub/csj/issue/56941/652216
https://dergipark.org.tr/tr/pub/csj/issue/56941/652216
Publikováno v:
Journal of Molecular Structure. 1156:726-732
WOS: 000425075900083
In this study, the electronic properties of symmetric and asymmetric double Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells have been investigated depending on the barrier width. Using the effective mass approach, the
In this study, the electronic properties of symmetric and asymmetric double Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells have been investigated depending on the barrier width. Using the effective mass approach, the
Simulation of Highly Reflective GaN/AlxGa1–xN Distributed Bragg Reflector Structure for UV-Blue LEDs
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:387-393
WOS: 000428138400013
In this study, we showed theoretically enhanced reflectance characteristics of nitride based blue Light Emitting Diode (LED) by adding GaN/AlxGa1-xN Distributed Bragg Reflector (DBR) between n-contact layer and GaN buffer la
In this study, we showed theoretically enhanced reflectance characteristics of nitride based blue Light Emitting Diode (LED) by adding GaN/AlxGa1-xN Distributed Bragg Reflector (DBR) between n-contact layer and GaN buffer la
Autor:
Ilkay Demir, Sezai Elagoz
Publikováno v:
Superlattices and Microstructures. 104:140-148
WOS: 000400536000016
In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown In(x
In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown In(x
Autor:
Ilkay Demir, Sezai Elagoz
Publikováno v:
Superlattices and Microstructures. 100:723-729
WOS: 000391905300075
We report the growth of high quality InGaAs/InAlAs quantum cascade laser (QCL) structure which composed of superlattices (SLs) and the effects of interruption time between each layer of the SL structure. Inserting an interru
We report the growth of high quality InGaAs/InAlAs quantum cascade laser (QCL) structure which composed of superlattices (SLs) and the effects of interruption time between each layer of the SL structure. Inserting an interru