Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Seyoum Wolde"'
Autor:
P. K. D. D. P. Pitigala, Yan-Feng Lao, A. G. U. Perera, Seyoum Wolde, Suraj P. Khanna, Edmund H. Linfield, Lianhe Li
Publikováno v:
Infrared Physics & Technology. 78:99-104
We have measured and analyzed, at different temperatures and bias voltages, the dark noise spectra of GaAs/AlGaAs heterojunction infrared photodetectors, where a highly doped GaAs emitter is sandwiched between two AlGaAs barriers. The noise and gain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ecde555feed637f1f64262987d34c4
https://doi.org/10.1016/j.infrared.2016.07.018
https://doi.org/10.1016/j.infrared.2016.07.018
Autor:
A. G. Unil Perera, Y. H. Zhang, Ted Schuler-Sandy, Yan-Feng Lao, Jun Oh Kim, Tianmeng Wang, Zhaobing Tian, Seyoum Wolde, Sanjay Krishna
Publikováno v:
Infrared Physics & Technology. 70:15-19
InAs/GaAs quantum dot (QD) and dots-in-well (DWELL) infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions are reported. Two response bands observed at 1.5–3 and 3–10 μ m are due to optical transitions from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c06646cf04a4c26dc3195aeb669e1840
https://doi.org/10.1016/j.infrared.2014.10.016
https://doi.org/10.1016/j.infrared.2014.10.016
Autor:
A. G. Unil Perera, Seyoum Wolde, Li Chen, Edmund H. Linfield, Dilip Chauhan, Lianhe Li, Suraj P. Khanna, Divya Somvanshi
Publikováno v:
Infrared Physics & Technology. 102:103026
In this work, the activation energy obtained from the temperature dependent internal photoemission spectroscopy (TDIPS) and thermionic dark currents using GaAs/AlGaAs photodetectors are compared. Different barrier heights within the p-type GaAs/AlGaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b582c74d909217de7847e822062814
https://doi.org/10.1016/j.infrared.2019.103026
https://doi.org/10.1016/j.infrared.2019.103026
Autor:
Zhaobing Tian, Ted Schuler-Sandy, Jun Oh Kim, Tianmeng Wang, Yueheng Zhang, Yan-Feng Lao, A. G. Unil Perera, Sanjay Krishna, Seyoum Wolde
Publikováno v:
Journal of Applied Physics. 121:244501
We report experimental results showing how the noise in a Quantum-Dot Infrared photodetector (QDIP) and Quantum Dot-in-a-well (DWELL) varies with the electric field and temperature. At lower temperatures (below ∼100 K), the noise current of both ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f60560eea904789b3e5be8dba8538f
https://doi.org/10.1063/1.4989834
https://doi.org/10.1063/1.4989834
Autor:
Srujan Meesala, A. G. Unil Perera, Subhananda Chakrabarti, Sourav Adhikary, Seyoum Wolde, Yigit Aytac
Publikováno v:
IndraStra Global.
An InAs/GaAs quantum dot infrared photodetector with strong, multicolor, broadband (5-20 mu m) photoresponse is reported. Using a combined quaternary In0.21Al0.21Ga0.58As and GaAs capping that relieves strain and maintains strong carrier confinement,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9935c253d9eef26f7730e97143375f5b
https://igi.indrastra.com/items/show/49581
https://igi.indrastra.com/items/show/49581
Autor:
Y. H. Zhang, Yan-Feng Lao, Jun Oh Kim, Tianmeng Wang, Ted Schuler-Sandy, Zhaobing Tian, Seyoum Wolde, Sanjay Krishna, A. G. Unil Perera
Publikováno v:
Applied Physics Letters. 105:151107
Terahertz (THz) response observed in a p-type InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well (DWELL) photodetector is reported. This detector displays expected mid-infrared response (from ∼3 to ∼10 μm) at temperatures below ∼100 K, while stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85caaa63f15992370d815ebfcb2b71e2
https://doi.org/10.1063/1.4898088
https://doi.org/10.1063/1.4898088
Autor:
Jun Oh Kim, Tianmeng Wang, Zhaobing Tian, Yan-Feng Lao, Y. H. Zhang, Seyoum Wolde, Ted Schuler-Sandy, A. G. Unil Perera, Sanjay Krishna
Publikováno v:
Applied Physics Letters. 104:171113
The n-type quantum dot (QD) and dots-in-well (DWELL) infrared photodetectors, in general, display bias-dependent multiple-band response as a result of optical transitions between different quantum levels. Here, we present a unique characteristic of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d72c6d7ba9f0b8d275f203b6db9f72
https://doi.org/10.1063/1.4875239
https://doi.org/10.1063/1.4875239
Autor:
A. G. Unil Perera, Y. H. Zhang, Yan-Feng Lao, Sanjay Krishna, Seyoum Wolde, H. C. Liu, Ted Schuler-Sandy, Zhaobing Tian, Jun Oh Kim, Tianmeng Wang
Publikováno v:
Applied Physics Letters. 103:241115
An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions as opposed to conventional electron transitions is reported. Two response bands observed at 1.5–3 and 3–10 μm are due to transitio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60c2e97639c1d73fc65d9cfbc4392ae8
https://doi.org/10.1063/1.4846555
https://doi.org/10.1063/1.4846555