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pro vyhledávání: '"Seyedfaraji, Saeed"'
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be evaluated before
Externí odkaz:
http://arxiv.org/abs/2401.14888
Publikováno v:
IEEE Access ( Volume: 10), 2022, Page(s): 82144 - 82155
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through therma
Externí odkaz:
http://arxiv.org/abs/2208.07838
Publikováno v:
2022 25th Euromicro Conference on Digital System Design (DSD)
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is based on
Externí odkaz:
http://arxiv.org/abs/2209.04434
This paper presents a novel circuit (AID) to improve the accuracy of an energy-efficient in-memory multiplier using a standard 6T-SRAM. The state-of-the-art discharge-based in-SRAM multiplication accelerators suffer from a non-linear behavior in thei
Externí odkaz:
http://arxiv.org/abs/2204.07387
Publikováno v:
In Microprocessors and Microsystems March 2020 73