Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Seyed Ali Sedigh Ziabari"'
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 6, Iss 1, Pp 35-58 (2021)
در این مقاله ، یک دیود تونل زنی تشدید با ساختار سد مضاعف AlAs / GaAs با استفاده از عملکرد سبز غیر تعادلی شبیه سازی شده است. یک لایه جذب InGaAs منطبق
Externí odkaz:
https://doaj.org/article/21ce8b7299cd436d9d386fbb193c2bb4
Publikováno v:
Silicon. 15:3215-3224
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86371c205ce5dcea06b64cf0e19c5441
https://doi.org/10.1007/s12633-022-02229-x
https://doi.org/10.1007/s12633-022-02229-x
Publikováno v:
Silicon. 14:12693-12706
We present a new Step Doped Drain and Source Nanowire FET (NWFET) using doping profile engineering to modify the energy band diagram. This transistor exhibits improved electrical characteristics suitable for digital design applications, such as the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a25e9682b8c4f9f82fbf1b4598ccd6b2
https://doi.org/10.1007/s12633-022-01979-y
https://doi.org/10.1007/s12633-022-01979-y
Publikováno v:
Journal of Electronic Materials. 50:170-185
In this paper, we introduce three new structures of a cylindrical gate-all-around nanowire (NW) field-effect transistor (FET) to achieve negative differential resistance (NDR) and negative transconductance (NTC) behaviors. In the first structure, onl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12dd4b235fd146cfb3ee8f6401c6d897
https://doi.org/10.1007/s11664-020-08572-2
https://doi.org/10.1007/s11664-020-08572-2
Publikováno v:
Journal of Electronic Materials. 48:5865-5874
In order to suppress the ambipolar current of a junctionless tunneling field effect transistor (JLTFET), this study focuses on the effect of the gate metal on the drain semiconductor, which was modeled as a capacitor by the analytical survey. The cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cf93f40685266689b1ae0a97e19e5c3
https://doi.org/10.1007/s11664-019-07335-y
https://doi.org/10.1007/s11664-019-07335-y
Publikováno v:
Superlattices and Microstructures. 126:63-71
In this paper, we have developed a novel technique for optimizing the work functions of a dual-material double-gate tunnel field effect transistor using analytical models. For this purpose, at first, the surface potential equation in the channel is o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad446e784afac5772fb82bbcb3a29f4b
https://doi.org/10.1016/j.spmi.2018.12.016
https://doi.org/10.1016/j.spmi.2018.12.016
Publikováno v:
International Nano Letters, Vol 8, Iss 4, Pp 277-286 (2018)
In this paper, a gallium antimonide junctionless tunnel field-effect transistor based on electrically doped concept (GaSb–EDTFET) is studied and simulated. The performance of the device is analyzed based on the energy band diagram and electric fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1207c924bc7e293413851ba71c7df2e1
http://link.springer.com/article/10.1007/s40089-018-0250-6
http://link.springer.com/article/10.1007/s40089-018-0250-6
Autor:
Seyed Ali Sedigh Ziabari1 sedigh@iaurasht.ac.ir, Mohammad Javad Tavakoli Saravani2
Publikováno v:
International Journal of Nano Dimension. Spring2017, Vol. 8 Issue 2, p107-113. 7p.
Publikováno v:
Superlattices and Microstructures. 111:103-114
This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e12401eb2fa4f082132ffff04efe4beb
https://doi.org/10.1016/j.spmi.2017.06.018
https://doi.org/10.1016/j.spmi.2017.06.018
Publikováno v:
Journal of Nano Research. 45:55-75
In this paper, a gate-all-around junctionless tunnel field effect transistor (JL-TFET) based on carbon nanotube (CNT) material is introduced and simulated. The JL-TFET is a CNT-channel heavily n-type-doped junctionless field effect transistor (JLFET)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9cebb1eec474ba2aff41b9adaacb8e9
https://doi.org/10.4028/www.scientific.net/jnanor.45.55
https://doi.org/10.4028/www.scientific.net/jnanor.45.55