Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Seyed Akram Hosseini"'
Publikováno v:
Engineering Reports, Vol 4, Iss 5, Pp n/a-n/a (2022)
Abstract In this article, n‐channel junction‐less transistors (JLTs) with gate lengths in the range of 20–250 nm, having crystalline‐silicon (c‐Si) and polycrystalline‐silicon (poly‐Si) channels are characterized for the short channel e
Externí odkaz:
https://doaj.org/article/b3052c8c6a6e47a38ef243ef38ce76da
Publikováno v:
Engineering Reports. 4
Publikováno v:
Microelectronics Reliability. 98:31-41
The threshold voltage is an important device and circuit parameter of any FET structure. In this paper, closed form analytic expressions are derived which determine the dependence of the threshold voltage of DGJLFETs on device dimensions, and the dra