Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Seungyong Byun"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Jae Hoon Lee, Hani Kim, Hyeon Woo Park, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract This work investigates the evolution of the ferroelectric (FE) performance of the sputtered aluminum scandium nitride (AlScN) thin film, which has a high remanent polarization (Pr, > 100 µC cm−2) and coercive field (Ec, > 6 MV cm−1), wi
Externí odkaz:
https://doaj.org/article/77e05821247b40d29ab7837383209f98
Autor:
Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Jae Hoon Lee, Hani Kim, Hyeon Woo Park, Cheol Seong Hwang
Publikováno v:
MRS Communications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089b0d698f0d658b26de381652741dda
https://doi.org/10.1557/s43579-023-00365-y
https://doi.org/10.1557/s43579-023-00365-y
Autor:
Hyeon Woo Park, Minsik Oh, In Soo Lee, Seungyong Byun, Yoon Ho Jang, Yong Bin Lee, Beom Yong Kim, Suk Hyun Lee, Seung Kyu Ryoo, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, Cheol Seong Hwang
Publikováno v:
Advanced Functional Materials. 33:2206637
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b68f0cb47f5d4a7fbd2ac004853866
https://doi.org/10.1002/adfm.202206637
https://doi.org/10.1002/adfm.202206637
Autor:
Yong Bin Lee, Beom Yong Kim, Hyeon Woo Park, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, Min Hyuk Park, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials. 8:2270056
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b74a4bf3a521c25a113fb2ecf1aa8af0
https://doi.org/10.1002/aelm.202270056
https://doi.org/10.1002/aelm.202270056
Autor:
Seung Kyu Ryoo, Kyung Do Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Yoon Ho Jang, Min Hyuk Park, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials. 8:2200726
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f21052d0cfe387a7aa72b6f783e8fb4
https://doi.org/10.1002/aelm.202200726
https://doi.org/10.1002/aelm.202200726
Autor:
Seung Kyu Ryoo, In Soo Lee, Yong Bin Lee, Min Hyuk Park, Se Hyun Kim, Seungyong Byun, Suk Hyun Lee, Beom Yong Kim, Doosup Shim, Hyeon Woo Park, Minsik Oh, Cheol Seong Hwang
Publikováno v:
Applied Physics Letters. 119:122902
In this study, the influence of the HfOxNy interfacial layer (IL), interposed between the atomic layer deposited ferroelectric (FE) Hf0.5Zr0.5O2 thin film and TiN top electrode, on the FE properties of such a film was examined. The HfOxNy IL decrease
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9719f60296c9a2a3f371fe6e6e41381
https://doi.org/10.1063/5.0065571
https://doi.org/10.1063/5.0065571
Autor:
Yong Bin Lee, Seungyong Byun, In Soo Lee, Hyeon Woo Park, Suk Hyun Lee, Seung Dam Hyun, Deok-Yong Cho, Minsik Oh, Doosup Shim, Seung Kyu Ryoo, Beom Yong Kim, Cheol Seong Hwang, Min Hyuk Park
Publikováno v:
Advanced Electronic Materials. 8:2100042
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7d2d9f28b45e9a76db7ca26f45ff5bb
https://doi.org/10.1002/aelm.202100042
https://doi.org/10.1002/aelm.202100042
Publikováno v:
Journal of Materials Chemistry C; 4/14/2024, Vol. 12 Issue 14, p4909-4918, 10p
Autor:
Shin, Jonghoon, Seo, Haengha, Ye, Kun Hee, Jang, Yoon Ho, Kwon, Dae Seon, Lim, Junil, Kim, Tae Kyun, Paik, Heewon, Song, Haewon, Kim, Ha Ni, Byun, Seungyong, Shin, Seong Jae, Kim, Kyung Do, Lee, Yong Bin, Lee, In Soo, Choi, Jung-Hae, Hwang, Cheol Seong
Publikováno v:
Journal of Materials Chemistry C; 4/14/2024, Vol. 12 Issue 14, p5035-5046, 12p