Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Seungyang Heo"'
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperatu
Externí odkaz:
https://doaj.org/article/7054610b50d846d5842cf680e20b0278
Autor:
Donghoon Kim, Sang Yeol Nam, Hyeon Han, Jucheol Park, Kanghyun Chu, Hyun M. Jang, Chan-Ho Yang, Seungyang Heo
Publikováno v:
ACS Applied Materials & Interfaces. 10:1846-1853
Ferroelectric photovoltaics (FPVs) are being extensively investigated by virtue of switchable photovoltaic responses and anomalously high photovoltages of ∼104 V. However, FPVs suffer from extremely low photocurrents due to their wide band gaps (Eg
Publikováno v:
Journal of Materials Chemistry C. 5:11763-11768
Complex oxide heterostructures composed of oxide semiconductor thin films and ferroelectric single crystals have attracted substantial interest due to the electrically switchable channel resistance by the polarization reversal of ferroelectrics. Here
Autor:
Seungyang Heo, Hu Young Jeong, Junwoo Son, Daehee Seol, Kim Sungho, Chadol Oh, Woo-Sung Jang, Young-Min Kim, Yunseok Kim
Publikováno v:
Applied Surface Science. 497:143727
Rare-earth nickelates have received great attention owing to the extreme sensitivity of their metal-insulator transition (MIT) and particularly the local defect state under external perturbation. Accordingly, it is critical to effectively control the
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature TD. Th
Publikováno v:
SCIENTIFIC REPORTS(6)
Scientific Reports
Scientific Reports
The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b14545c3016d10262bc23be18f53e45
http://open-repository.kisti.re.kr/cube/handle/open_repository/481903.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/481903.do
Publikováno v:
Applied Physics Letters. 108:122106
The electronic devices using correlated transition metal oxides are the promising candidates to overcome the limitation of the current electronics due to the rich electronic phases and the extreme sensitivities. Here, we report proton-based resistive
Publikováno v:
Applied Physics Letters; 3/21/2016, Vol. 108 Issue 12, p122106-1-122106-5, 5p, 3 Graphs