Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Seungwon Go"'
Autor:
Jingyu Park, Seungwon Go, Woojun Chae, Chang Il Ryoo, Changwook Kim, Hyungju Noh, Seonggeun Kim, Byung Du Ahn, In-Tak Cho, Pil Sang Yun, Jong Uk Bae, Yoo Seok Park, Sangwan Kim, Dae Hwan Kim
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract In this paper, the floating body effect (FBE) in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) and the mechanism of device failure caused by that are reported for the first time. If the toggle AC pulses are applied to the gate
Externí odkaz:
https://doaj.org/article/5f711601b71347d4922d187adbf0a41c
Publikováno v:
IEEE Transactions on Electron Devices. 69:910-914
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f06ca7a463f5eac7cbb92f193c1fcde3
https://doi.org/10.1109/ted.2022.3140283
https://doi.org/10.1109/ted.2022.3140283
Autor:
Seungwon Go, Jae Yeon Park, Shinhee Kim, Hyung Ju Noh, Dong Keun Lee, So Ra Park, Sangwan Kim
Publikováno v:
2022 International Conference on Electronics, Information, and Communication (ICEIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdcdb4029f8f38cbaabec8fa07fc3095
https://doi.org/10.1109/iceic54506.2022.9748455
https://doi.org/10.1109/iceic54506.2022.9748455
Publikováno v:
2022 International Conference on Electronics, Information, and Communication (ICEIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbf7d359a7806c07d08c3d9910fa98a1
https://doi.org/10.1109/iceic54506.2022.9748635
https://doi.org/10.1109/iceic54506.2022.9748635
Autor:
Seungwon Go, Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyung Ju Noh, So Ra Park, Yoon Kim, Dae Hwan Kim, Sangwan Kim
Publikováno v:
Solid-State Electronics. 198:108483
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8097f0395c2fcff40cd2729f53e54d7
https://doi.org/10.1016/j.sse.2022.108483
https://doi.org/10.1016/j.sse.2022.108483
Publikováno v:
Japanese Journal of Applied Physics. 60:SCCE07
A recessed-channel tunnel field-effect transistor (RCTFET) with intrinsic Si layer between gate and source/drain is proposed and its electrical characteristics are examined by technology computer-aided design simulation for lower subthreshold swing (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720f5a2389ae39878521b83c467757b8
https://doi.org/10.35848/1347-4065/abf2d2
https://doi.org/10.35848/1347-4065/abf2d2
Publikováno v:
Solid-State Electronics. 175:107956
Nanoelectromechanical (NEM) device has been regarded as one of the future switching devices due to its nearly infinite switching slope and zero off-state leakage current. However, it suffers from high pull-in voltage which causes high operation volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a06fecca0223d3472552b0f43d2bab
https://doi.org/10.1016/j.sse.2021.107956
https://doi.org/10.1016/j.sse.2021.107956
Autor:
Park, Jingyu1 (AUTHOR), Go, Seungwon2 (AUTHOR), Chae, Woojun3 (AUTHOR), Ryoo, Chang Il3 (AUTHOR), Kim, Changwook1 (AUTHOR), Noh, Hyungju2 (AUTHOR), Kim, Seonggeun2 (AUTHOR), Du Ahn, Byung3 (AUTHOR), Cho, In-Tak3 (AUTHOR), Yun, Pil Sang3 (AUTHOR), Bae, Jong Uk3 (AUTHOR), Park, Yoo Seok3 (AUTHOR), Kim, Sangwan2 (AUTHOR) sangwan@sogang.ac.kr, Kim, Dae Hwan1 (AUTHOR) drlife@kookmin.ac.kr
Publikováno v:
Scientific Reports. 5/2/2024, Vol. 14 Issue 1, p1-8. 8p.
Publikováno v:
IEEE Transactions on Electron Devices; Mar2022, Vol. 69 Issue 3, p910-914, 5p
Publikováno v:
Japanese Journal of Applied Physics; Jun2021, Vol. 60 Issue SC, p1-7, 7p