Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Seungmin Yeo"'
Autor:
Ga Yeon Lee, Seungmin Yeo, Chan-Mi Cho, Seung Hoon Oh, Hyeonbin Park, Bo Keun Park, Seung Uk Son, Taeyong Eom, Taek-Mo Chung
Publikováno v:
Inorganic Chemistry. 62:4680-4687
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b181a7bc36e3e27e5105cfbc04fd052
https://doi.org/10.1021/acs.inorgchem.3c00141
https://doi.org/10.1021/acs.inorgchem.3c00141
Autor:
Chan Woo Park, Gun Hwan Kim, Bo Keun Park, Younghun Byun, Taeyong Eom, Seung-Min Han, Seunghun Lee, Seungmin Yeo, Taek-Mo Chung, Jeong Min Hwang, Hanuel Yang
Publikováno v:
Journal of Materials Chemistry C. 9:3820-3825
Ruthenium (Ru) thin films were grown via atomic layer deposition (ALD) using a novel Ru precursor with enhanced reactivity, namely Ru(η5-cycloheptadienyl)2 (Ru(chd)2) and O2. Self-limiting growth during the Ru ALD process was achieved by varying the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8c9d3aabd248bf1ab58ff9d05f72c2
https://doi.org/10.1039/d0tc05682k
https://doi.org/10.1039/d0tc05682k
Publikováno v:
ACS Applied Materials & Interfaces. 11:8234-8241
Fully "Erase-free" multi-bit operation was demonstrated in a W/HfO2/TiN-stacked resistive switching device. The term Erase-free means that a digital state in a multi-bit operation can be achieved without initializing the device resistance state when
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::769f8156cb8102899d539fc33e837db2
https://doi.org/10.1021/acsami.8b20035
https://doi.org/10.1021/acsami.8b20035
Autor:
R. Rahul, Jeong Woo Han, Yujin Jang, Bonggeun Shong, Dip K. Nandi, Jong Seong Bae, Soo-Hyun Kim, Hyungjun Kim, Tae Hyun Kim, Seungmin Yeo
Publikováno v:
Applied Surface Science. 459:596-605
Tungsten disulfide (WS2) thin films are grown on several types of substrates by plasma-enhanced atomic layer deposition (PEALD) technique using tungsten hexacarbonyl [W(CO)6] and H2S plasma at a relatively low temperature of 350 °C. The method deliv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::519a020f954a7617e02b8798aab53520
https://doi.org/10.1016/j.apsusc.2018.07.210
https://doi.org/10.1016/j.apsusc.2018.07.210
Autor:
Byeonghyeon Jang, Seung Gi Seo, Hyungjun Kim, Seungmin Yeo, Taejin Choi, Jeong Gyu Song, Soo-Hyun Kim
Publikováno v:
Surface and Coatings Technology. 344:12-20
Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4210b1bb39ae223d33b1796b4ca69316
https://doi.org/10.1016/j.surfcoat.2018.02.082
https://doi.org/10.1016/j.surfcoat.2018.02.082
Autor:
Tae Eun Hong, Yujin Jang, Soo-Hyun Kim, Hyungjun Kim, Jong Seong Bae, Dip K. Nandi, Soonyoung Jung, Seungmin Yeo
Publikováno v:
Surface and Coatings Technology. 337:404-410
Cobalt oxide (CoOx) thin films were deposited on thermally grown SiO2 substrates by atomic layer deposition (ALD) using bis(1,4-di-iso-propyl-1,4-diazabutadiene)cobalt (C16H32N4Co) and oxygen (O2) as reactants at deposition temperatures ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99f2b03938cf09efa5405132701b291f
https://doi.org/10.1016/j.surfcoat.2018.01.047
https://doi.org/10.1016/j.surfcoat.2018.01.047
Autor:
Soo-Hyun Kim, Dip K. Nandi, Sumanta Sahoo, Jaeyeong Heo, Hyungjun Kim, Soumyadeep Sinha, Seungmin Yeo, Ravindra N. Bulakhe, Jae-Jin Shim
Publikováno v:
ACS Applied Materials & Interfaces. 9:40252-40264
This article takes an effort to establish the potential of atomic layer deposition (ALD) technique toward the field of supercapacitors by preparing molybdenum disulfide (MoS2) as its electrode. While molybdenum hexacarbonyl [Mo(CO)6] serves as a nove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d913ef21d7b588f52cbd5bfef867d0
https://doi.org/10.1021/acsami.7b12248
https://doi.org/10.1021/acsami.7b12248
Publikováno v:
ACS applied materialsinterfaces. 11(8)
Fully "Erase-free" multi-bit operation was demonstrated in a W/HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2ec3b858e026bd1c922e3363dd5ed21d
https://pubmed.ncbi.nlm.nih.gov/30706706
https://pubmed.ncbi.nlm.nih.gov/30706706
Publikováno v:
Applied Surface Science. 365:160-165
Molybdenum disulfide (MoS2) thin films were grown directly on SiO2 covered wafers by atomic layer deposition (ALD) at the deposition temperatures ranging from 175 to 225 °C using molybdenum hexacarbonyl [Mo(CO)6] and H2S plasma as the precursor and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a72dc04a1482e5ecea030dc490d8e3
https://doi.org/10.1016/j.apsusc.2016.01.038
https://doi.org/10.1016/j.apsusc.2016.01.038
Autor:
Jong Hyun Ahn, Seungmin Yeo, Seong Dae Kim, Hyungjun Kim, Taehoon Cheon, Taejin Choi, Soo-Hyun Kim
Publikováno v:
Electrochimica Acta. 334:135596
An atomic layer deposition (ALD) of ultra-thin and conformal carbon shell is demonstrated as a powerful technique for enhancing the rate performance of a nanostructured Li-ion battery (LIB) electrode. Structuring conformal-carbon-shell-coated TiO2 na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::428072a6b321ac6d8bfd9fb2f9401ab5
https://doi.org/10.1016/j.electacta.2019.135596
https://doi.org/10.1016/j.electacta.2019.135596