Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Seungjun Moon"'
Autor:
Sojin Jeong, Sangwoo Han, Ho-Jun Lee, Deokjoon Eom, Gisu Youm, Yejoo Choi, Seungjun Moon, Kyungjin Ahn, Jinju Oh, Changhwan Shin
Publikováno v:
IEEE Access, Vol 9, Pp 116953-116961 (2021)
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO2-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS
Externí odkaz:
https://doaj.org/article/8a24f2572cf74700a250f05d17324054
Publikováno v:
Nano Convergence, Vol 7, Iss 1, Pp 1-7 (2020)
Abstract In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelec
Externí odkaz:
https://doaj.org/article/70fc07b13bef42edbb601fc66dedfd90
Autor:
Yejoo Choi, Changwoo Han, Jaemin Shin, Seungjun Moon, Jinhong Min, Hyeonjung Park, Deokjoon Eom, Jehoon Lee, Changhwan Shin
Publikováno v:
Sensors, Vol 22, Iss 11, p 4087 (2022)
The endurance characteristic of Zr-doped HfO2 (HZO)-based metal–ferroelectric–metal (MFM) capacitors fabricated under various deposition/annealing temperatures in the atomic layer deposition (ALD) process was investigated. The chamber temperature
Externí odkaz:
https://doaj.org/article/8ab63427ed514869ad155f5f8c305a2c
Publikováno v:
Micromachines, Vol 11, Iss 5, p 525 (2020)
Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices
Externí odkaz:
https://doaj.org/article/10c8878b8e1541c0a87acd6d9943baae
Autor:
Sangwoo Han, Changhwan Shin, Seungjun Moon, Gisu Youm, Ho-Jun Lee, Jinju Oh, Sojin Jeong, Deokjoon Eom, Kyungjin Ahn, Yejoo Choi
Publikováno v:
IEEE Access. 9:116953-116961
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO2-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS
Publikováno v:
Nanotechnology. 34:185203
In this work, the endurance characteristics of Al-doped HfO2 (HAO)-based metal-ferroelectric-metal (MFM) capacitors (which were annealed at 1000 °C) with various doping concentrations were investigated. The doping concentration was optimized for the
Publikováno v:
Electronics
Volume 10
Issue 16
Electronics, Vol 10, Iss 1899, p 1899 (2021)
Volume 10
Issue 16
Electronics, Vol 10, Iss 1899, p 1899 (2021)
In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the base
Publikováno v:
Micromachines
Volume 11
Issue 5
Micromachines, Vol 11, Iss 525, p 525 (2020)
Volume 11
Issue 5
Micromachines, Vol 11, Iss 525, p 525 (2020)
Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices
Publikováno v:
Electronics
Volume 9
Issue 5
Electronics, Vol 9, Iss 704, p 704 (2020)
Volume 9
Issue 5
Electronics, Vol 9, Iss 704, p 704 (2020)
A ferroelectric-gated fin-shaped field effect transistor (Fe-FinFET) is fabricated by connecting a Pb(Zr0.2Ti0.8)O3-based ferroelectric capacitor into the gate electrode of FinFET. The ferroelectric capacitor shows coercive voltages of approximately
Publikováno v:
Nano Convergence
Nano Convergence, Vol 7, Iss 1, Pp 1-7 (2020)
Nano Convergence, Vol 7, Iss 1, Pp 1-7 (2020)
In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric capa