Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Seungjoo Nah"'
Autor:
Seungjoo Nah
Publikováno v:
Materials Research Express, Vol 3, Iss 7, p 075008 (2016)
We study the dynamic nuclear polarization of nitrogen-vacancy (NV) centers in diamond through optical pumping. The polarization is enhanced due to the hyperfine interaction of nuclear spins as applied magnetic fields vary. This is a result of the ave
Externí odkaz:
https://doaj.org/article/5e555e3b45fe440097485b5eedf2186c
Autor:
Youngsun Oh, Taehun Lee, Dongsuk Cho, Haeyong Park, Joo Hyoung Kim, Han-jin Lim, Hyeongsun Hong, Soo-jin Hong, Changkyu Lee, Yi-tae Kim, Chongkwang Chang, Doo-Won Kwon, Seungjoo Nah, Jung-Chak Ahn, Jingyun Kim, Ho-Kyu Kang, Kyu-Pil Lee, Sangill Jung, Hyun-Chul Kim, In-sung Joe, Jae-Kyu Lee, Jong-Eun Park
Publikováno v:
ISSCC
As the smart mobile device market continues to grow and the number of cameras per device rapidly increases, demand for CMOS image sensors (CIS) also increases. Two major trends in mobile device cameras are: (1) adopting smaller pixels that enable gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f551c53edb0eedee8e34a33f48c12cc1
https://doi.org/10.1109/isscc19947.2020.9062924
https://doi.org/10.1109/isscc19947.2020.9062924
Autor:
Yongin Park, H.S. Jeong, Woong Joo, Dongyoung Jang, Jesuk Lee, Haewon Lee, Seungjoo Nah, Donghyuk Park, Seung-Wook Lee, Yun-Ki Lee, Mi Hye Kim, Yi-tae Kim, Sang-il Jung, Sungho Suh, Chang-Rok Moon, Bum-Suk Kim, Seungwon Cha, Hee-sang Kwon, Jinhwa Han
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A 0.8 μm-pitch 64 megapixels ultrahighresolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC) of 6k e- was achieved in 0.8 μm pixels as the best in the world, and the advanced color fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4897b99caead3b6b00c7cf6861e5f5b2
https://doi.org/10.1109/iedm19573.2019.8993487
https://doi.org/10.1109/iedm19573.2019.8993487
Autor:
Seungjoo Nah
Publikováno v:
EPL (Europhysics Letters). 123:17001
We study the mesoscopic fluctuation in a multilevel quantum dot on account of the disorder. In the regime of strong Coulomb blockade, statistically independent multilevel contributes to suppression of a single-particle level fluctuation near the mixe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81eea2d233afe7ac9e7c5e722d8fb534
https://doi.org/10.1209/0295-5075/123/17001
https://doi.org/10.1209/0295-5075/123/17001
Autor:
Donghyuk Park, Chung Youngwoo, Tae Chan Kim, Gab-Soo Han, Young-Chan Kim, Yunkyung Kim, Duck-Hyung Lee, Jeonsook Lee, Eun-Kyung Park, Seungjoo Nah, Y. Jay Jung, Dongyoung Jang, Gyehun Choi, Hong-ki Kim, Jong-Eun Park, Yi-tae Kim, Taeheon Lee, Jung-Chak Ahn, Yooseung Lee, Yujung Choi, Kyung-Ho Lee, Joon-Hyuk Im, Bum-Suk Kim, Mi Hye Kim, Daniel K. J. Lee, Haeyong Park, Heesang Kown, Sangjun Choi, Ihara Hisanori, Goto Hiroshige, Byung-hyun Yim, Won-Je Park, Sung-Ho Choi, Youngsun Oh, Seung-Wook Lee, Taesub Jung, H.S. Jeong, Chi-Young Choi, Gi-Doo Lee
Publikováno v:
ISSCC
According to the trend towards high-resolution CMOS image sensors, pixel sizes are continuously shrinking, towards and below 1.0μm, and sizes are now reaching a technological limit to meet required SNR performance [1-2]. SNR at low-light conditions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cc98089be8daa57e0c0f8ae1d5d95de
https://doi.org/10.1109/isscc.2014.6757365
https://doi.org/10.1109/isscc.2014.6757365
Autor:
Seungjoo Nah, M. Pustilnik
Publikováno v:
Physical Review B. 85
We study the dependence of the Kondo temperature on the gate voltage in a strongly blockaded quantum dot with a small single-particle level spacing. We show that the dependence cannot be fitted to that of the Anderson impurity model with the gate vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfc5cfbf5a41717fc99366d25e5b09e0
https://doi.org/10.1103/physrevb.85.235311
https://doi.org/10.1103/physrevb.85.235311