Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Seungjin Choo"'
Autor:
Sungman Rhee, Hyunjin Kim, Sangku Park, Taiki Uemura, Yuchul Hwang, Seungjin Choo, Jinju Kim, Hwasung Rhee, Shinyoung Chung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd1ae2da3bcc4160d771a959855311dd
https://doi.org/10.1109/irps48203.2023.10117962
https://doi.org/10.1109/irps48203.2023.10117962
Autor:
Seongkyung Kim, Ukjin Jung, Seungjin Choo, Kihyun Choi, Taejin Chung, Shinyoung Chung, Euncheol Lee, Juhun Park, Deokhan Bae, Myungyoon Um
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ddeece160bc76ece9e1977aba23942
https://doi.org/10.1109/irps48227.2022.9764599
https://doi.org/10.1109/irps48227.2022.9764599
Autor:
Md Iqbal Mahmud, Rakesh Ranjan, Ki-Don Lee, Pavitra Ramadevi Perepa, Caleb Dongkyun Kwon, Seungjin Choo, Kihyun Choi
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef24161496e305578b80c787e321605f
https://doi.org/10.1109/irps48227.2022.9764601
https://doi.org/10.1109/irps48227.2022.9764601
Autor:
Jinseok Kim, Myung Soo Yeo, Kihyun Choi, Jinju Kim, Tae-Young Jeong, Miji Lee, Seungjin Choo, Young-Han Kim, Eun-Cheol Lee
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
In this paper, we will report the reliability characterization of advanced FinFET technology which is developed by utilizing EUV. The intrinsic device reliability including HCI, BTI, and TDDB is comparable across FinFET technologies, and would not be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d93579c2b32e133aaf5348d1bf552e5
https://doi.org/10.1109/iitc51362.2021.9537487
https://doi.org/10.1109/iitc51362.2021.9537487
Autor:
Sangsu Ha, Hyun-Jin Kim, Tae-Young Jeong, Sang-chul Shin, Minhyeok Choe, Sungyoung Yoon, Hyewon Shim, Hyun Chul Sagong, Junekyun Park, Seungjin Choo, Sangwoo Pae
Publikováno v:
IRPS
Far-BEOL forming gas anneal has been used to passivate the dangling bonds and to improve the integrity of the gate dielectric [1-2]. The extensive reliability characterization study was conducted on 14nm FinFETs to study the effects of anneals using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4681acc47ccbe4c0e653bb26a07d76d
https://doi.org/10.1109/irps.2018.8353649
https://doi.org/10.1109/irps.2018.8353649
Autor:
Udit Monga, Taiki Uemura, Seungjin Choo, Jaehee Choi, Keun-Ho Lee, Uihui Kwon, Sangwoo Pae, Soonyoung Lee, Jongwook Jeon
Publikováno v:
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Soft-errors are one of the most important reliability issues in logic and memory circuits. Proper estimation of soft-error-rate (SER) is important for error mitigation and SER robust circuit design. This paper presents a physical charge collection mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::036e14ae2ef7dfc3068a33cb32cdc43b
https://doi.org/10.1109/sispad.2016.7605205
https://doi.org/10.1109/sispad.2016.7605205
Autor:
Minjung Jin, Yoohwan Kim, Haebum Lee, Changze Liu, Jinju Kim, Lijie Zhang, Sangwoo Pae, Kab-Jin Nam, Hyewon Shim, Jongwoo Park, Seungjin Choo, Jungin Kim
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
A severity of hot carrier injection (HCI) in PFET becomes worse than NFET at elevated temperatures. This new observation is further found to be due to the coupled self-heating effects (SHE) during DC HCI stress (also a higher Ea in PFET HCI), rather
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59e568f95eb0dfd6ab6fce4834764d97
https://doi.org/10.1109/irps.2016.7574505
https://doi.org/10.1109/irps.2016.7574505
Autor:
Hyunchul Sagong, Seungjin Choo, Jin-soak Kim, Minjung Jin, Yeshin Kim, Sungyoung Yoon, Seung Chul Shin, Changze Liu, Sangwoo Pae, Seung-Hyun Park, Ju-Seop Park, Hyeonwoo Nam, Hwa-Kyung Kim, Hyewon Shim, Junekyun Park
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db222c11cb9a817ac51c35177685375c
https://doi.org/10.1109/iedm.2015.7409744
https://doi.org/10.1109/iedm.2015.7409744
Autor:
Sungmock Ha, Jongwoo Park, Hye-Jin Kim, Hyun-Jin Kim, Jinju Kim, Yoohwan Kim, Lira Hwang, Seungjin Choo, Minjung Jin, Changze Liu, Soonyoung Lee, Hyun Chul Sagong, Junekyun Park, Jungin Kim, Sungyoung Yoon, Sangwoo Pae, Kangjung Kim, Hyeonwoo Nam
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Aging induced variability has been shaving away the design margins in advanced SRAM which may become more serious with highly scaled process node. This paper provides a systematical study of the BTI variation impacts in FinFET SRAM based on 14nm 128M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dee6b834292e8680c78abc22023b7d
https://doi.org/10.1109/iedm.2015.7409675
https://doi.org/10.1109/iedm.2015.7409675
Autor:
Hyun-Jin Kim, Hye-Jin Kim, Seungjin Choo, Jongwoo Park, Changze Liu, Sangsu Ha, Bisung Jo, Jin-Joo Kim, Sangwoo Pae, Yoohwan Kim, Minjung Jin, Hyun-Woo Lee, Hyunchul Sagong
Publikováno v:
IRPS
In this paper, fundamental reliability findings in 14nm bulk FinFET technology, are systematically investigated. From device and Ring Oscillator stress to product-level HTOL results, we show that BTI on (110) Fin can be improved significantly with op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee0f4e34d944e8a9723e0b2ca3a9a23
https://doi.org/10.1109/irps.2015.7112693
https://doi.org/10.1109/irps.2015.7112693