Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Seunghyo Lee"'
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
This study aims to clarify how filler-typed metals which were ERNiCrMo-3 and ERNiCrMo-4 affect corrosion resistance characteristics in the weldment of super austenitic stainless steel joints under the simulated desulfurization environment for ships.
Externí odkaz:
https://doaj.org/article/821d4e0cc9ff489b94108e490342dc30
Publikováno v:
Journal of Environmental Chemical Engineering. 11:109075
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e60edce8676c168392bb7bb719edabd
https://doi.org/10.1016/j.jece.2022.109075
https://doi.org/10.1016/j.jece.2022.109075
Publikováno v:
Materials Characterization. 193:112276
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4b585037d821a547b7f579dcd9fad24
https://doi.org/10.1016/j.matchar.2022.112276
https://doi.org/10.1016/j.matchar.2022.112276
Publikováno v:
Thin Solid Films. 632:134-140
The effect of SiO2 thin film passivation by sol-gel processes with various acid catalysts, ethanol (EtOH): tetraethyl orthosilicate (TEOS) volume ratios and baking temperatures on the carrier lifetime of the Si surface and Si/SiO2 interface propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb23ce71559520c8cf8b7dbf014f5adb
https://doi.org/10.1016/j.tsf.2017.04.040
https://doi.org/10.1016/j.tsf.2017.04.040
Publikováno v:
Surface Science. 658:22-30
Indium arsenide (InAs) is the candidate of choice as a new channel material for application in future technologies beyond the Si–based electronic devices because it has a much higher electron mobility than silicon. In this study, the oxidation and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b82c72ee4fd7be4db6435cfcba7e149d
https://doi.org/10.1016/j.susc.2017.01.002
https://doi.org/10.1016/j.susc.2017.01.002
Publikováno v:
Applied Surface Science. 399:523-534
Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a395998cb79c7f3e77e2d4205c9af34
https://doi.org/10.1016/j.apsusc.2016.12.114
https://doi.org/10.1016/j.apsusc.2016.12.114
Publikováno v:
Applied Surface Science. 376:34-42
Organic solvents can effectively remove photoresists on III–V channels without damage or etching of the channel material during the process. In this study, a two-step sequential photoresist removal process using two different organic solvents was d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64d4beaa2c860aa05734885a1a7df854
https://doi.org/10.1016/j.apsusc.2016.03.100
https://doi.org/10.1016/j.apsusc.2016.03.100
Publikováno v:
Applied Surface Science. 371:129-138
Ge surfaces were etched by means of metal-assisted chemical etching (MaCE). The behavior of the MaCE reaction in diluted H 2 O 2 was compared with that of a conventional etchant of HF/H 2 O 2 /H 2 O mixture (FPM). Herein we first report that a pyrami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95cfa08744da41915590e7ef609c5320
https://doi.org/10.1016/j.apsusc.2016.02.197
https://doi.org/10.1016/j.apsusc.2016.02.197
Autor:
SeungHyo, Lee, Nagahiro, Saito
Publikováno v:
RSC advances. 8(62)
The development of a metal-free carbon based electrocatalyst for the oxygen reduction reaction (ORR) is an essential issue for energy conversion systems. Herein, we suggest a tune-up solution plasma (SP) synthesis based on a simple one-step and cost-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d5c6af3037e674c2a294581729548e3f
https://pubmed.ncbi.nlm.nih.gov/35547914
https://pubmed.ncbi.nlm.nih.gov/35547914
Publikováno v:
The Journal of Physical Chemistry C. 119:24774-24780
Gallium antimonide (GaSb) has an extremely high electron mobility and an excellent lattice match with various III–V ternary and quaternary compounds. In this study, the effect of wet-etching processes on the GaSb (001) surface was investigated, wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32f33fe021f675123c9fff4741b6e28d
https://doi.org/10.1021/acs.jpcc.5b04250
https://doi.org/10.1021/acs.jpcc.5b04250